{"title":"超声处理是半导体材料和器件缺陷工程的新途径","authors":"M. K. Sheinkman, N. Korsunskaya, S. Ostapenko","doi":"10.1109/SMICND.1998.732332","DOIUrl":null,"url":null,"abstract":"UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices\",\"authors\":\"M. K. Sheinkman, N. Korsunskaya, S. Ostapenko\",\"doi\":\"10.1109/SMICND.1998.732332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described.\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.732332\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices
UltraSound Treatment, UST, of semiconductors in many cases results in a stable improvement of material properties and device parameters and thus can be used in a defect engineering. The physical backgrounds of such effects as well as UST methods and apparatus are described.