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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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Computer simulation of surface barrier solar cells with microrelief interface 具有微浮雕界面的表面阻挡太阳能电池的计算机模拟
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733806
N. Dmitruk, O. Borkovskaya, I.B. Mamontova, O.V. Rengevych
{"title":"Computer simulation of surface barrier solar cells with microrelief interface","authors":"N. Dmitruk, O. Borkovskaya, I.B. Mamontova, O.V. Rengevych","doi":"10.1109/SMICND.1998.733806","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733806","url":null,"abstract":"An original numerical simulator was developed, which provides a 1D self-consistent solution for Poisson's equation and continuity equations for electrons and holes. This simulator uses the boundary conditions at the interface taking into account the surface (interface) recombination, the above-barrier transport of major carriers and Schockley-Read recombination in the space charge region. For calculation of electron-hole pairs generation rate the special spectral dependence of the reflection coefficient of light was used, that is characteristic for microrelief interface of metal-semiconductor structure. The morphology and statistical geometric properties of interface were investigated by atomic force microscopy (AFM).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129894384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hierarchical modeling in the simulation of electronic circuits 电子电路仿真中的分层建模
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733793
R. Zlatanovici, A. Manolescu, M. Glesner
{"title":"Hierarchical modeling in the simulation of electronic circuits","authors":"R. Zlatanovici, A. Manolescu, M. Glesner","doi":"10.1109/SMICND.1998.733793","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733793","url":null,"abstract":"The paper presents for the beginning the general principles of hardware modeling and their implementation in ANACAD's HDL-A language. In order to meet the requirements of one of the principles, the authors developed a program for binding models written in HDL-A. This program and it's future developing prospects are described in the last part of the paper.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114582477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing 快速热退火Zn/sup +/ P/sup +/共注入GaAs的拉曼和霍尔效应表征
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732294
V. Ursaki, A. Terletsky, I. Tiginyanu
{"title":"Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing","authors":"V. Ursaki, A. Terletsky, I. Tiginyanu","doi":"10.1109/SMICND.1998.732294","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732294","url":null,"abstract":"It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow impurity profile within 0.15 /spl mu/m.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124552734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solid state gas sensors: Some aspects of electrical conductivity and reconstruction of intergrain barriers in the gas sensitive films 固态气体传感器:电导率的某些方面和气敏薄膜中晶粒间势垒的重建
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732344
A. Ivashchenko, I. Kerner
{"title":"Solid state gas sensors: Some aspects of electrical conductivity and reconstruction of intergrain barriers in the gas sensitive films","authors":"A. Ivashchenko, I. Kerner","doi":"10.1109/SMICND.1998.732344","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732344","url":null,"abstract":"The energy spectrum reconstruction in film intergrain barriers due to transition from polycrystalline to weakly textured state is studied. The effect of this factor on electrical conductivity of film gas sensor is discussed. Several barrier height distributions were analysed.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127959608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
From micro- to nano-technologies 从微技术到纳米技术
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732253
D. Dascalu
{"title":"From micro- to nano-technologies","authors":"D. Dascalu","doi":"10.1109/SMICND.1998.732253","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732253","url":null,"abstract":"Twenty years after the first CAS, the landscape of semiconductor technologies is significantly changed and diversified by a great number of microtechnologies (i.e. technologies of microfabrication). New developments are related to the non-electronics structures, including sensors and actuators. The fact that they can be brought down in size and cost and fabricated with the same technology as the electronic devices, paves the way to the monolithic integration of systems (i.e. a complete system on a chip). The fabrication of nanostructures (structures with characteristic features of a few nanometers) also shows a big promise for information and communication technologies, because new quantum devices may offer new attractive solutions for information sensing, storage, computation, transfer processing and display. The nanotechnology brings us much closer to the chemical and biological world and allows much accurate and comprehensive experiments in fundamental sciences. The next step will be the development of biomimetic system and revolutionary technologies inspired from nature. To a large extent even when silicon is not preferred as a basic material, the present day microelectronics is a starting point for new developments. With an enormous potential. Microelectronics seems to be like a highway constructed on an unexplored continent of challenges and possibilities.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130200171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Some features of interaction between phases in Ge/GaAs heterostructure Ge/GaAs异质结构中相间相互作用的一些特征
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732356
K. A. Dauletov, G. N. Kashin, R. Konakova, V. Lyapin, V. V. Milenin, V. F. Mitin
{"title":"Some features of interaction between phases in Ge/GaAs heterostructure","authors":"K. A. Dauletov, G. N. Kashin, R. Konakova, V. Lyapin, V. V. Milenin, V. F. Mitin","doi":"10.1109/SMICND.1998.732356","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732356","url":null,"abstract":"We have studied (i) the effect of heat treatment in a vacuum on the electrical characteristics (barrier height and reverse current) of the Schottky contact based on the Ge/GaAs heterostructure and (ii) Auger concentration depth profiles of the heterosystem components.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122337076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental evidence of giant fluctuations in the electrical response of very thin SnO/sub 2/ films 极薄SnO/ sub2 /薄膜电响应巨大波动的实验证据
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732346
C. Cobianu, M. Mihaila, L. Bocioaca, D. Lungu, C. Savaniu, A. Arnautu, R. Iorgulescu
{"title":"Experimental evidence of giant fluctuations in the electrical response of very thin SnO/sub 2/ films","authors":"C. Cobianu, M. Mihaila, L. Bocioaca, D. Lungu, C. Savaniu, A. Arnautu, R. Iorgulescu","doi":"10.1109/SMICND.1998.732346","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732346","url":null,"abstract":"A simple comb structure provided with p/sup +/ silicon temperature sensor and Al electrodes predeposited on Si/SiO/sub 2/ substrates has been used to study the room temperature time-dependent voltage response of undoped and Sb doped SnO/sub 2/ sol-gel derived thin films as a function of injected constant current. Giant voltage fluctuations were revealed for input currents higher than a certain threshold that varied as a function of film technology and surface topography. The results were qualitatively interpreted in terms biased percolation model.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121313983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low dimensional silicon for integrated optoelectronics 集成光电子用低维硅
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733772
A. Nassiopoulou
{"title":"Low dimensional silicon for integrated optoelectronics","authors":"A. Nassiopoulou","doi":"10.1109/SMICND.1998.733772","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733772","url":null,"abstract":"In contrast to bulk silicon, which is an indirect gap semiconductor, with very low efficiency in radiation emission, low dimensional silicon structures (quantum dots or wires) can emit light with very high efficiency at room temperature. The best known form of low dimensional silicon is porous silicon but other materials of low dimensional silicon, in the form of nanocrystallites or nanowires within insulating matrices, can be fabricated. Their application in silicon based optoelectronics is a challenging one. In this respect, both materials and fabrication techniques need to be compatible with the existing silicon technology. In this paper, the fabrication and properties of low dimensional silicon (nanowires in the form of silicon nanopillars on bulk crystalline silicon and nanocrystallites deposited on thin SiO/sub 2/ layers) will be discussed.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126834288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High speed, low-power CMOS voltage buffers 高速、低功耗CMOS电压缓冲器
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732330
M. Neag, O. McCarthy
{"title":"High speed, low-power CMOS voltage buffers","authors":"M. Neag, O. McCarthy","doi":"10.1109/SMICND.1998.732330","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732330","url":null,"abstract":"The standard implementation of a voltage buffer uses a two-stage opamp with total negative feedback; this results in good linearity and low output impedance but also in bandwidth reduction and stability problems. This paper presents several results of a different approach: one stage, class AB configurations, operating in open-loop or at most having some internal feedback. Three such configurations are compared: the simple complementary source follower and two combinations of the complementary source follower and common source stages, the latter driven by supplementary error opamps or directly by the source follower. The three buffers were designed for low-voltage, low-power and optimised for speed. Their bandwidth, output impedance and total harmonic distortion are compared under equal conditions of voltage supply and power consumption. Also, the possibility of driving capacitive loads and the implementation of CCII+ are discussed.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115475458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Field emitter arrays technologies and materials 场发射阵列技术与材料
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733764
I. Kleps, G. Banoiu, V. Avramescu, A. Angelescu
{"title":"Field emitter arrays technologies and materials","authors":"I. Kleps, G. Banoiu, V. Avramescu, A. Angelescu","doi":"10.1109/SMICND.1998.733764","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733764","url":null,"abstract":"Silicon emitters arrays of various geometrical characteristics were realised using different micromachining technologies. The emitter geometry can be modified varying the technological parameters like: etch rate, selectivity and surface morphology. Silicon emitters were covered with various materials in order to improve their field emission properties.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116426826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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