Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing

Abstract

It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow impurity profile within 0.15 /spl mu/m.