Ge/GaAs异质结构中相间相互作用的一些特征

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732356

K. A. Dauletov, G. N. Kashin, R. Konakova, V. Lyapin, V. V. Milenin, V. F. Mitin

{"title":"Ge/GaAs异质结构中相间相互作用的一些特征","authors":"K. A. Dauletov, G. N. Kashin, R. Konakova, V. Lyapin, V. V. Milenin, V. F. Mitin","doi":"10.1109/SMICND.1998.732356","DOIUrl":null,"url":null,"abstract":"We have studied (i) the effect of heat treatment in a vacuum on the electrical characteristics (barrier height and reverse current) of the Schottky contact based on the Ge/GaAs heterostructure and (ii) Auger concentration depth profiles of the heterosystem components.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Some features of interaction between phases in Ge/GaAs heterostructure\",\"authors\":\"K. A. Dauletov, G. N. Kashin, R. Konakova, V. Lyapin, V. V. Milenin, V. F. Mitin\",\"doi\":\"10.1109/SMICND.1998.732356\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have studied (i) the effect of heat treatment in a vacuum on the electrical characteristics (barrier height and reverse current) of the Schottky contact based on the Ge/GaAs heterostructure and (ii) Auger concentration depth profiles of the heterosystem components.\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.732356\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732356","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们研究了(i)真空热处理对基于Ge/GaAs异质结构的肖特基触点电学特性(势垒高度和逆流)的影响，以及(ii)异质系统组分的奥歇浓度深度分布。

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Some features of interaction between phases in Ge/GaAs heterostructure

We have studied (i) the effect of heat treatment in a vacuum on the electrical characteristics (barrier height and reverse current) of the Schottky contact based on the Ge/GaAs heterostructure and (ii) Auger concentration depth profiles of the heterosystem components.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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