N. Dmitruk, O. Borkovskaya, I.B. Mamontova, O.V. Rengevych
{"title":"Computer simulation of surface barrier solar cells with microrelief interface","authors":"N. Dmitruk, O. Borkovskaya, I.B. Mamontova, O.V. Rengevych","doi":"10.1109/SMICND.1998.733806","DOIUrl":null,"url":null,"abstract":"An original numerical simulator was developed, which provides a 1D self-consistent solution for Poisson's equation and continuity equations for electrons and holes. This simulator uses the boundary conditions at the interface taking into account the surface (interface) recombination, the above-barrier transport of major carriers and Schockley-Read recombination in the space charge region. For calculation of electron-hole pairs generation rate the special spectral dependence of the reflection coefficient of light was used, that is characteristic for microrelief interface of metal-semiconductor structure. The morphology and statistical geometric properties of interface were investigated by atomic force microscopy (AFM).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An original numerical simulator was developed, which provides a 1D self-consistent solution for Poisson's equation and continuity equations for electrons and holes. This simulator uses the boundary conditions at the interface taking into account the surface (interface) recombination, the above-barrier transport of major carriers and Schockley-Read recombination in the space charge region. For calculation of electron-hole pairs generation rate the special spectral dependence of the reflection coefficient of light was used, that is characteristic for microrelief interface of metal-semiconductor structure. The morphology and statistical geometric properties of interface were investigated by atomic force microscopy (AFM).