快速热退火Zn/sup +/ P/sup +/共注入GaAs的拉曼和霍尔效应表征

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732294

V. Ursaki, A. Terletsky, I. Tiginyanu

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引用次数: 0

摘要

结果表明，Zn/sup +//P/sup +/共注入与快速热退火(RTA)相结合，可获得峰值空穴浓度高达2.10/sup 19/ cm/sup -3/的P型GaAs层，杂质分布在0.15 /spl mu/m以内。

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Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing

It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow impurity profile within 0.15 /spl mu/m.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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