极薄SnO/ sub2 /薄膜电响应巨大波动的实验证据

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732346

C. Cobianu, M. Mihaila, L. Bocioaca, D. Lungu, C. Savaniu, A. Arnautu, R. Iorgulescu

{"title":"极薄SnO/ sub2 /薄膜电响应巨大波动的实验证据","authors":"C. Cobianu, M. Mihaila, L. Bocioaca, D. Lungu, C. Savaniu, A. Arnautu, R. Iorgulescu","doi":"10.1109/SMICND.1998.732346","DOIUrl":null,"url":null,"abstract":"A simple comb structure provided with p/sup +/ silicon temperature sensor and Al electrodes predeposited on Si/SiO/sub 2/ substrates has been used to study the room temperature time-dependent voltage response of undoped and Sb doped SnO/sub 2/ sol-gel derived thin films as a function of injected constant current. Giant voltage fluctuations were revealed for input currents higher than a certain threshold that varied as a function of film technology and surface topography. The results were qualitatively interpreted in terms biased percolation model.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental evidence of giant fluctuations in the electrical response of very thin SnO/sub 2/ films\",\"authors\":\"C. Cobianu, M. Mihaila, L. Bocioaca, D. Lungu, C. Savaniu, A. Arnautu, R. Iorgulescu\",\"doi\":\"10.1109/SMICND.1998.732346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple comb structure provided with p/sup +/ silicon temperature sensor and Al electrodes predeposited on Si/SiO/sub 2/ substrates has been used to study the room temperature time-dependent voltage response of undoped and Sb doped SnO/sub 2/ sol-gel derived thin films as a function of injected constant current. Giant voltage fluctuations were revealed for input currents higher than a certain threshold that varied as a function of film technology and surface topography. The results were qualitatively interpreted in terms biased percolation model.\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.732346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用p/sup +/硅温度传感器和预镀在Si/SiO/sub - 2/衬底上的Al电极的简单梳状结构，研究了未掺杂和掺Sb的SnO/sub - 2/溶胶-凝胶衍生薄膜的室温时电压响应随注入恒电流的变化。当输入电流高于某一阈值时，电压波动会随着薄膜技术和表面形貌的变化而变化。结果用偏渗模型进行了定性解释。

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Experimental evidence of giant fluctuations in the electrical response of very thin SnO/sub 2/ films

A simple comb structure provided with p/sup +/ silicon temperature sensor and Al electrodes predeposited on Si/SiO/sub 2/ substrates has been used to study the room temperature time-dependent voltage response of undoped and Sb doped SnO/sub 2/ sol-gel derived thin films as a function of injected constant current. Giant voltage fluctuations were revealed for input currents higher than a certain threshold that varied as a function of film technology and surface topography. The results were qualitatively interpreted in terms biased percolation model.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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