场发射阵列技术与材料

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733764

I. Kleps, G. Banoiu, V. Avramescu, A. Angelescu

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引用次数: 3

摘要

采用不同的微加工技术实现了不同几何特性的硅发射阵列。发射极的几何形状可以改变工艺参数，如:蚀刻速率、选择性和表面形貌。为了提高硅发射体的场发射性能，在硅发射体表面覆盖了各种材料。

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Field emitter arrays technologies and materials

Silicon emitters arrays of various geometrical characteristics were realised using different micromachining technologies. The emitter geometry can be modified varying the technological parameters like: etch rate, selectivity and surface morphology. Silicon emitters were covered with various materials in order to improve their field emission properties.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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