{"title":"Field emitter arrays technologies and materials","authors":"I. Kleps, G. Banoiu, V. Avramescu, A. Angelescu","doi":"10.1109/SMICND.1998.733764","DOIUrl":null,"url":null,"abstract":"Silicon emitters arrays of various geometrical characteristics were realised using different micromachining technologies. The emitter geometry can be modified varying the technological parameters like: etch rate, selectivity and surface morphology. Silicon emitters were covered with various materials in order to improve their field emission properties.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733764","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Silicon emitters arrays of various geometrical characteristics were realised using different micromachining technologies. The emitter geometry can be modified varying the technological parameters like: etch rate, selectivity and surface morphology. Silicon emitters were covered with various materials in order to improve their field emission properties.