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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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On the operation mode of bidirectional lightning surge protection devices 关于双向雷涌保护装置的工作方式
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732375
D. Flores, X. Jordà, S. Hidalgo, J. Fernandez, J. Millán
{"title":"On the operation mode of bidirectional lightning surge protection devices","authors":"D. Flores, X. Jordà, S. Hidalgo, J. Fernandez, J. Millán","doi":"10.1109/SMICND.1998.732375","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732375","url":null,"abstract":"Modern telecommunication equipment has to be protected from high voltage, long period disturbances produced by lightning shocks or capacitive coupling. Power semiconductor devices are commonly used in parallel protection up to 4 kV, 150 A transient peaks. This paper analyses the operation mode of an optimised bidirectional breakover diode (BBD) and experimental results are reported from fabricated 180 V BBD devices with holding current values in the range of 150-250 mA.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125630458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Integrated flow sensor for fluids with dynamic velocity, temperature and conductivity profiles 集成流量传感器与动态速度，温度和电导率剖面的流体
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733812
D. Popescu, C. Dunare, P. Lerch, P. Renaud, M. Modreanu, D. Dascalu
{"title":"Integrated flow sensor for fluids with dynamic velocity, temperature and conductivity profiles","authors":"D. Popescu, C. Dunare, P. Lerch, P. Renaud, M. Modreanu, D. Dascalu","doi":"10.1109/SMICND.1998.733812","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733812","url":null,"abstract":"A new type of integrated thermal flow sensor containing two symmetrical measuring channels is presented. The structure permit optimisation of flow sensing in applications with transient velocity, temperature or conductivity profiles in the fluid and has improved sensitivities for small temperatures differences above ambient, necessary for medical applications. Analysis is made for fluid flow and heat transfer using analytical and FEA technics. Technological implementation optimises the compensation of the internal stresses in the suspended structures and passivation of the sensor structure for work in aggressive media. Electronic interfaces for processing are derived for development of a fully integrated variant of the sensor.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134309392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Genetic algorithm based extraction of IC device model parameters 基于遗传算法的IC器件模型参数提取
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733766
Huazhong Yang, Hui Wang, Lingyan Zhao
{"title":"Genetic algorithm based extraction of IC device model parameters","authors":"Huazhong Yang, Hui Wang, Lingyan Zhao","doi":"10.1109/SMICND.1998.733766","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733766","url":null,"abstract":"As genetic algorithms (GAs) have high robustness in finding the global optimum of functions with multi-extremum no matter what the starting points are, yet the traditional search methods are easy to be trapped into the local optima if the initial points are not good enough. GAs are applied to extracting model parameters of semiconductor devices in this paper. After addressing the main concept of GAs and their superiority to traditional optimization algorithms, some advanced strategies and knowledge-based techniques are proposed to improve the global convergence and efficiency of solving the problem of the model parameter extraction (MPE). As it proves that the DC model parameters of bipolar junction transistors (BJT) can be successfully extracted by the GA-base algorithms, the methodologies proposed in this paper may be extended to MPE problems of other IC devices.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131787741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Heterostructures design optimisation 异质结构设计优化
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732355
G. Dima, O. Mitrea, B. Govoreanu, G. Antonoiu, W. Schoenmaker, G. Salmer, M. Profirescu
{"title":"Heterostructures design optimisation","authors":"G. Dima, O. Mitrea, B. Govoreanu, G. Antonoiu, W. Schoenmaker, G. Salmer, M. Profirescu","doi":"10.1109/SMICND.1998.732355","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732355","url":null,"abstract":"In this paper, the optimisation of heterostructure devices using Design of Experiments and Response Surface Model approaches is presented. As an example, the structural optimisation of a pseudomorphic Al/sub 0.2/Ga/sub 0.8/As/In/sub 0.2/Ga/sub 0.8/As/GaAs pulse doped HEMT is discussed.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124400503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of the 50 /spl Omega/-noise mismatch in microwave low-noise transistors 微波低噪声晶体管50 /spl ω /-噪声失配分析
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733820
A. Caddemi, F. Di Prima, M. Sannino
{"title":"Analysis of the 50 /spl Omega/-noise mismatch in microwave low-noise transistors","authors":"A. Caddemi, F. Di Prima, M. Sannino","doi":"10.1109/SMICND.1998.733820","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733820","url":null,"abstract":"The noise parameters are the electrical representation of the noise performance of transistors most widely used in the design of low-noise microwave amplifiers. The noise parameters F/sub 0/-/spl Gamma//sub 0/ (complex) and r/sub n/ of a given transistor type exhibit typical properties over the microwave frequency range as we have observes from several packaged devices characterized and modeled in our lab. In this work we have focused our attention upon the noise performance of transistors having their input terminated on 50 /spl Omega/ which is the standard value of the signal impedance in a microwave system. This paper presents the results of a comparative analysis on the noise performance observed in advanced BJT's and HEMT's when moving from the noise matching condition (minimum noise figure) to the 50 /spl Omega/ source termination. The analysis has been performed on the basis of the noisy circuit models previously extracted from device measurements.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116282693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Neuron MOS technique designed 8 channels Winner Takes it All integrated circuit 神经元MOS技术设计了8通道赢家通吃集成电路
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733815
D. Dobrescu, R. Comanescu, L. Dobrescu
{"title":"Neuron MOS technique designed 8 channels Winner Takes it All integrated circuit","authors":"D. Dobrescu, R. Comanescu, L. Dobrescu","doi":"10.1109/SMICND.1998.733815","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733815","url":null,"abstract":"This paper presents a novel design for a Winner Takes it All integrated circuit implemented in a 0.8 microns neuron MOS technology. The circuit design emphasis is on simplicity and compactness. It contains only 11 neuron MOS circuits and 18 MOS transistors. The paper contains the description and the layout of the WTA circuit as well as some component blocks.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121392178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optoelectronic integration in silicon-on-insulator technologies 绝缘体上硅技术中的光电集成
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733771
J. Boussey, S. Chouteau
{"title":"Optoelectronic integration in silicon-on-insulator technologies","authors":"J. Boussey, S. Chouteau","doi":"10.1109/SMICND.1998.733771","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733771","url":null,"abstract":"Established silicon microelectronics fabrication techniques can be largely exploited to fabricate low-loss, low-cost and high volume optical integrated devices. Because of the availability of a buried insulator layer underneath a thin monocrystalline silicon film, Silicon-On-Insulator substrates are currently shown to be a natural candidate for the integration of guided-wave optics components working at the fiber-optical communications wavelengths of 1.33 and 1.55 /spl mu/m. In this paper, the authors review the basic principles of optical waveguides on SOI materials and describe some recent realizations based on optoelectronic system integration in SOI technologies (waveguides, switches, phase modulator or shifter, etc.).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122973143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Model of electron field emission from Si through SiO/sub 2/ Si通过SiO/sub / 2/的电子场发射模型
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733833
V. Filip, D. Nicolaescu, F. Okuyama, J. Itoh
{"title":"Model of electron field emission from Si through SiO/sub 2/","authors":"V. Filip, D. Nicolaescu, F. Okuyama, J. Itoh","doi":"10.1109/SMICND.1998.733833","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733833","url":null,"abstract":"The field electron emission from Si occurring through a SiO/sub 2/ layer is considered. The applied electric field may produce electron accumulations near the emitting site and a reduction of the effective emitting surface area. The effect is stimulated by the oxide thickness increase.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128404873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High temperature Ti-Al-based ohmic contacts to p-6H-SiC p-6H-SiC的高温ti - al基欧姆触点
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732387
A. Andreev, M. Rastegaeva, A. Babanin, M. A. Yagovkina, S.V. Rendokova, N. Savkina
{"title":"High temperature Ti-Al-based ohmic contacts to p-6H-SiC","authors":"A. Andreev, M. Rastegaeva, A. Babanin, M. A. Yagovkina, S.V. Rendokova, N. Savkina","doi":"10.1109/SMICND.1998.732387","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732387","url":null,"abstract":"Low-resistance ohmic contacts (10/sup -4/ Ohm cm/sup 2/ at N/sub a/-N/sub d/=10/sup 19/ cm/sup -3/) based on Ti-Al composition were prepared to p-6H-SiC grown by various techniques. This contacts demonstrate exellent reproductivity and the ones can operate at the environment temperatures up to 550/spl deg/C and densities of direct current up to 10/sup 4/ A/cm/sup 2/. Structure and composition of contact coating were studied by AES and SIMS layer-by-layer technique and X-ray phase analysis. Advanced study of electrical characteristic of Ti-Al-based ohmic contacts was carried out.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116856626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An accurate method of 6H-SiC PIN structures parameter extraction using C-V characteristics 利用C-V特性精确提取6H-SiC PIN结构参数的方法
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732388
B. Tudor, G. Brezeanu, M. Badila, M. Locatelli, J. Chante, J. Millán, P. Godignon, A. Lebedev, N. Savkina
{"title":"An accurate method of 6H-SiC PIN structures parameter extraction using C-V characteristics","authors":"B. Tudor, G. Brezeanu, M. Badila, M. Locatelli, J. Chante, J. Millán, P. Godignon, A. Lebedev, N. Savkina","doi":"10.1109/SMICND.1998.732388","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732388","url":null,"abstract":"Our paper reports an optimal parameter extraction method based on a new model for the high frequency capacitance-voltage characteristics of the 6H-SiC boron doped junction. The C-V model confirms the presence of two type regions (p/sup -/ and n/sup -/) in the quasi-intrinsic layer induced by boron doping. The extracted values of the net doping of these zones (6-10/spl times/10/sup 12/ cm/sup -3/) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, about twice the epilayer's width, proves the expansion of the quasi-intrinsic region in the substrate.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114338905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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