利用C-V特性精确提取6H-SiC PIN结构参数的方法

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732388

B. Tudor, G. Brezeanu, M. Badila, M. Locatelli, J. Chante, J. Millán, P. Godignon, A. Lebedev, N. Savkina

{"title":"利用C-V特性精确提取6H-SiC PIN结构参数的方法","authors":"B. Tudor, G. Brezeanu, M. Badila, M. Locatelli, J. Chante, J. Millán, P. Godignon, A. Lebedev, N. Savkina","doi":"10.1109/SMICND.1998.732388","DOIUrl":null,"url":null,"abstract":"Our paper reports an optimal parameter extraction method based on a new model for the high frequency capacitance-voltage characteristics of the 6H-SiC boron doped junction. The C-V model confirms the presence of two type regions (p/sup -/ and n/sup -/) in the quasi-intrinsic layer induced by boron doping. The extracted values of the net doping of these zones (6-10/spl times/10/sup 12/ cm/sup -3/) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, about twice the epilayer's width, proves the expansion of the quasi-intrinsic region in the substrate.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An accurate method of 6H-SiC PIN structures parameter extraction using C-V characteristics\",\"authors\":\"B. Tudor, G. Brezeanu, M. Badila, M. Locatelli, J. Chante, J. Millán, P. Godignon, A. Lebedev, N. Savkina\",\"doi\":\"10.1109/SMICND.1998.732388\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Our paper reports an optimal parameter extraction method based on a new model for the high frequency capacitance-voltage characteristics of the 6H-SiC boron doped junction. The C-V model confirms the presence of two type regions (p/sup -/ and n/sup -/) in the quasi-intrinsic layer induced by boron doping. The extracted values of the net doping of these zones (6-10/spl times/10/sup 12/ cm/sup -3/) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, about twice the epilayer's width, proves the expansion of the quasi-intrinsic region in the substrate.\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.732388\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732388","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文报道了一种基于新模型的6H-SiC掺硼结高频电容电压特性的优化参数提取方法。C-V模型证实了硼掺杂诱导的准本征层中存在两种类型的区域(p/sup -/和n/sup -/)。这些区域的净掺杂提取值(6-10/spl倍/10/sup 12/ cm/sup -3/)与先前报道的数据吻合良好。相比之下，准本征层的厚度约为脱毛层宽度的两倍，证明了衬底中准本征区域的扩展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An accurate method of 6H-SiC PIN structures parameter extraction using C-V characteristics

Our paper reports an optimal parameter extraction method based on a new model for the high frequency capacitance-voltage characteristics of the 6H-SiC boron doped junction. The C-V model confirms the presence of two type regions (p/sup -/ and n/sup -/) in the quasi-intrinsic layer induced by boron doping. The extracted values of the net doping of these zones (6-10/spl times/10/sup 12/ cm/sup -3/) are in good agreement with previously reported data. In contrast, the thickness of the quasi-intrinsic layer, about twice the epilayer's width, proves the expansion of the quasi-intrinsic region in the substrate.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

自引率

0.00%

发文量