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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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Electrical properties of sandwich structures with aluminum nitride layers 氮化铝夹层结构的电学性能
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732352
M. Tanase, C. Morosanu, V. Dumitru, L. Ţugulea, N. Tomozeiu
{"title":"Electrical properties of sandwich structures with aluminum nitride layers","authors":"M. Tanase, C. Morosanu, V. Dumitru, L. Ţugulea, N. Tomozeiu","doi":"10.1109/SMICND.1998.732352","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732352","url":null,"abstract":"Electrical properties of adherent, low stressed aluminum nitride films prepared by magnetron sputtering have been studied. Arrhenius plots in the 100/spl deg/-170/spl deg/C range of temperature and transient current curves with different bias steps (at room temperature and 150/spl deg/C) have been performed. The conduction activation energy has been found and its dependence on subsequent annealings has been studied. A phenomenological conduction model at the ITO-AlN interface based on the shape of the transient curves has been elaborated. The conditions of behaviour of AlN as a highly insulating layer (sputtering conditions, thicknesses, annealing temperatures) have been established.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131438479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Method to increase the thermal stability of the heating circuits 增加加热电路热稳定性的方法
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733795
F. Draghici, F. Mitu, G. Dilimot, I. Enache
{"title":"Method to increase the thermal stability of the heating circuits","authors":"F. Draghici, F. Mitu, G. Dilimot, I. Enache","doi":"10.1109/SMICND.1998.733795","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733795","url":null,"abstract":"This paper presents a new method for thermal stabilization in electrically heated ovens. Using this technique we develop a heating system for thermal characterization of the high temperature silicon carbide devices.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"318 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131724312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Hardware implementation of adaptive processing for smart sensor arrays 智能传感器阵列自适应处理的硬件实现
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733826
A. Paraschiv-Ionescu, G. Bouvier, C. Jutten, A. Rusu
{"title":"Hardware implementation of adaptive processing for smart sensor arrays","authors":"A. Paraschiv-Ionescu, G. Bouvier, C. Jutten, A. Rusu","doi":"10.1109/SMICND.1998.733826","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733826","url":null,"abstract":"In this paper we present a new architecture of a smart microsystem based on a sensor array and a source separation algorithm. After the validation of the microsystem based on simulations, a prototype is currently designed for magnetic field silicon Hall sensors. For an efficient hardware implementation a detailed study of the accuracy precision computation is developed.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125331904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Shape evolution during through-mask electrochemical micromachining at low and high aspect ratio 低长宽比和高长宽比下透膜电化学微加工的形状演变
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733811
A. Dikusar, O. Keloglu, S. Yushchenko
{"title":"Shape evolution during through-mask electrochemical micromachining at low and high aspect ratio","authors":"A. Dikusar, O. Keloglu, S. Yushchenko","doi":"10.1109/SMICND.1998.733811","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733811","url":null,"abstract":"Shape evolution during through-mask electrochemical micromachining was investigated to study the problem of dissolution (electrodeposition) uniformity at low and high aspect ratio. Mathematical model to predict shape evolution by assuming primary current distribution is advanced. The results of calculation are compared with the experimental data on anodic dissolution of copper in neutral nitrate solutions.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126608250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Membrane supported microwave circuits 膜支撑微波电路
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733774
A. Muller, S. Iordanescu
{"title":"Membrane supported microwave circuits","authors":"A. Muller, S. Iordanescu","doi":"10.1109/SMICND.1998.733774","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733774","url":null,"abstract":"The aim of the paper is to present the results obtained by our group in the very exciting field of micromachines structures dedicated to microwave circuits. The main results are: the manufacturing of dielectric membranes on high resistivity silicon substrates, as well as of thin GaAs membranes, the design, manufacturing and characterization of membrane supported distributed and lumped microwave circuit elements. This novel technology has promising prospects regarding the development of microwave and millimeter wave monolithic integrated circuits.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"259 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114467861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimized polysilicon CMOS technology for gate array applications 门阵列应用的优化多晶硅CMOS技术
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733756
E. Manea, C. Gingu, I. Cernica, F. Craciunoiu, S. Dunare, R. Divan, C. Dunare, I. Beldiman, M. Modreanu, D. Dascalu
{"title":"Optimized polysilicon CMOS technology for gate array applications","authors":"E. Manea, C. Gingu, I. Cernica, F. Craciunoiu, S. Dunare, R. Divan, C. Dunare, I. Beldiman, M. Modreanu, D. Dascalu","doi":"10.1109/SMICND.1998.733756","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733756","url":null,"abstract":"The gate arrays option in manufacturing ASIC CMOS is conditioned by the possibility of satisfying small orders requirements of small- and medium-sized electronic equipment manufacturing companies, in a large variety of circuits. The authors present contributions in optimizing critical processes for an n-well CMOS polysilicon gate arrays technology. Technological achievements were proved by measurements on the test devices but mainly by array chip fabrication. There were manufactured chips for specialized circuits intended for telephone switching equipment.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115515622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Change of the optical properties of porous silicon by post anodization treatments 后阳极氧化处理对多孔硅光学性能的影响
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733777
G. Pavelescu, M. Ciurea, L. Mihut, G. Galeata, E. Lengyel, I. Baltog, J. Roger
{"title":"Change of the optical properties of porous silicon by post anodization treatments","authors":"G. Pavelescu, M. Ciurea, L. Mihut, G. Galeata, E. Lengyel, I. Baltog, J. Roger","doi":"10.1109/SMICND.1998.733777","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733777","url":null,"abstract":"Optical properties of as prepared porous silicon (PS) were compared with those of thermally treated and chemically cleaned samples. The change of the photoluminescence (PL) spectra correlated with ellipsometric, reflectance and Raman measurements leads us to conclude that the adsorbed species on the PS nanocrystalline structure play an important role in the origin of the PL emission, at least for as-anodized samples.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123009395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new method for discriminating different reducing gases with SnO/sub 2/ sensors SnO/sub / 2传感器鉴别不同还原性气体的新方法
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733814
R. Ionescu, A. Vancu, C. Moise, A. Tomescu
{"title":"A new method for discriminating different reducing gases with SnO/sub 2/ sensors","authors":"R. Ionescu, A. Vancu, C. Moise, A. Tomescu","doi":"10.1109/SMICND.1998.733814","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733814","url":null,"abstract":"By combining the changes induced by different reducing gases in electrical resistance with the corresponding changes of a second physical parameter, it is possible to discriminate between groups of different reducing gases.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123434017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Organic-inorganic system of quantum wells derived by the sol-gel technology 溶胶-凝胶技术衍生的有机-无机量子阱体系
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733780
L. Diaz-Flores, J. Pérez-Bueno, J. Pérez-Robles, F.J. Espinoza-Beltrau, R. Ramírez-Bon, J. González-Hernández, Y. Vorobiev
{"title":"Organic-inorganic system of quantum wells derived by the sol-gel technology","authors":"L. Diaz-Flores, J. Pérez-Bueno, J. Pérez-Robles, F.J. Espinoza-Beltrau, R. Ramírez-Bon, J. González-Hernández, Y. Vorobiev","doi":"10.1109/SMICND.1998.733780","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733780","url":null,"abstract":"Samples containing organic colorants (Brilliant Blue, Fast Green and Brilliant Black) dissolved in the SiO/sub 2/ glass were prepared by the solution-gelatinization technique which allows quick and easy preparation and doping of the material. The optical absorption, luminescence excitation and emission spectra of the colored glass films thus obtained reveal the existence of the discrete energy levels. A simple model is given treating the organic molecules as the two-dimensional potential wells for electrons.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126897187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezoresistance effect in PbTe semiconductor microwires deformed by bending 弯曲变形PbTe半导体微线的压阻效应
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733779
M.P. Dyntu, V.G. Kantser, D.F. Meglei
{"title":"Piezoresistance effect in PbTe semiconductor microwires deformed by bending","authors":"M.P. Dyntu, V.G. Kantser, D.F. Meglei","doi":"10.1109/SMICND.1998.733779","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733779","url":null,"abstract":"Piezoresistance properties of n- and p-type PbTe semiconductor microwires in a glass coating deformed by bending were studied. It was found that the sample resistance changes linearly with the deformation change. The piezoresistance coefficients are high within the limits (30-200) depending on the diameter and type of the samples. An optimum regime of heat treatment leading the resistance and coefficients of tensor sensitivity to stability in time was found.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128097868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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