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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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Stress control for process optimization of the capacitive pressure sensors for biomedical applications achieved by surface micromachining technology 利用表面微加工技术实现生物医学用电容式压力传感器工艺优化的应力控制
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732280
F. Găiseanu, C. Postolache, D. Dascalu, J. Esteve, D. Tsoukalas, R. Jachowicz, A. Badoiu, E. Vasile
{"title":"Stress control for process optimization of the capacitive pressure sensors for biomedical applications achieved by surface micromachining technology","authors":"F. Găiseanu, C. Postolache, D. Dascalu, J. Esteve, D. Tsoukalas, R. Jachowicz, A. Badoiu, E. Vasile","doi":"10.1109/SMICND.1998.732280","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732280","url":null,"abstract":"An integrated structure of capacitive pressure sensor for biomedical applications achieved by surface micromachining technology, consisting in the pressure sensor and a testing component is presented. The test structure permitted to apply the pull-in voltage method for the evaluation of the residual stress in the polysilicon layer on the basis of a new form of the set of two equations describing the beam pull-in voltage effect. The integrated structure allowed the optimization of the phosphorus diffusion process to obtain low stress polysilicon membranes of the capacitive pressure sensors for biomedical applications.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114919914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoelectrochemical solar cells on the ease of multinary layered semiconductors 光电化学太阳能电池在多层半导体上的应用
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733810
I. Tsiulyanu, A. Simashkevich, A. Sprinchean
{"title":"Photoelectrochemical solar cells on the ease of multinary layered semiconductors","authors":"I. Tsiulyanu, A. Simashkevich, A. Sprinchean","doi":"10.1109/SMICND.1998.733810","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733810","url":null,"abstract":"The photoelectric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The photoelectrochemical processes which occur at the illuminated electrolyte-semiconductor interface lead to the conversion of the radiation energy into the electrical one. The spectral and current-voltage characteristics were studied. The values of the photopotential up to 0.75 V and of the short circuit current up to 1 mA/cm/sup 2/ have been obtained. It was showed that the photoelectrode corrosion is practically absent.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"630 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115111868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reconfigurable hardware systems 可重构硬件系统
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732274
F. Rincón, L. Terés
{"title":"Reconfigurable hardware systems","authors":"F. Rincón, L. Terés","doi":"10.1109/SMICND.1998.732274","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732274","url":null,"abstract":"In this paper we'll make a short review, of the evolution of reconfigurable devices and their role inside reconfigurable systems, that we'll use to introduce an new emerging field: reconfigurable computing. We'll give the clues to understand its possibilities, as well as the applications that better suit to this techniques and systems in the midway between pure hardware and software solutions.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"55 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115998252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A versatile threshold logic gate 一种通用阈值逻辑门
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732326
A. Stokman, S. Cotofana, S. Vasilliadis
{"title":"A versatile threshold logic gate","authors":"A. Stokman, S. Cotofana, S. Vasilliadis","doi":"10.1109/SMICND.1998.732326","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732326","url":null,"abstract":"The main drawback of Capacitive Threshold Logic (CTL) gates relates to the threshold valid programming. Because each gate may require a different reference voltage to set its threshold it is practically impossible to use this approach to build circuits with more than a couple of gates. In this paper we propose a new scheme, the Capacitor Programmable CTL (CP-CTL), which alleviate the CTL gate programming issue. The CP-CTL implementation of a 32-bit adder as also presented.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128540403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Dosimetric characteristics of the indium phosphide based photoconvertors 磷化铟基光电转换器的剂量学特性
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733809
I. Andronic, A. Simashkevich, T. Potlog, D. Sherban, P. Ketrush
{"title":"Dosimetric characteristics of the indium phosphide based photoconvertors","authors":"I. Andronic, A. Simashkevich, T. Potlog, D. Sherban, P. Ketrush","doi":"10.1109/SMICND.1998.733809","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733809","url":null,"abstract":"The results of dosimetric characteristics investigations for the detectors fabricated on the basis of ITO-InP structures of SIS types are given. It was shown that between short circuit current and X-rays irradiation dose power there is a linear dependance as in the case of the studied convertors lumination with integral light from the visible region of spectrum. The sensitivity of ITO-InP structures functioning as X-ray detectors is of 3 /spl mu/A/(rad min) cm/sup 2/ which indicates the possibility of their utilization as an active element of ionizing radiation detecting devices.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130529101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of /spl gamma/-radiation on the transition layer in metal-semiconductor contacts /spl γ辐射对金属-半导体触点过渡层的影响
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732366
A. Belyaev, G. E. Chaika, I. Il’in, R. Konakova, V. Lyapin, V.V. Milenin, O.E. Rengevych, E. Soloviev, M. Tagaev, D.I. Voitsikhovskiy
{"title":"Effect of /spl gamma/-radiation on the transition layer in metal-semiconductor contacts","authors":"A. Belyaev, G. E. Chaika, I. Il’in, R. Konakova, V. Lyapin, V.V. Milenin, O.E. Rengevych, E. Soloviev, M. Tagaev, D.I. Voitsikhovskiy","doi":"10.1109/SMICND.1998.732366","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732366","url":null,"abstract":"An effect of /spl gamma/-radiation on atomic diffusion in the metal-semiconductor heterostructures is considered theoretically. Diffusion of impurities into the transition layer results in the potential redistribution between the depletion and the transition layers. An excess current through the barrier via an \"intermediate\" level occurs. The calculated results are compared with the experimental data.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"423 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123391065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electric field-caused redistribution of mobile charged donors in semiconductors 电场引起半导体中移动带电供体的再分配
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732290
M. Sheinkman, N. Kashirina, V.V. Kislyuk
{"title":"Electric field-caused redistribution of mobile charged donors in semiconductors","authors":"M. Sheinkman, N. Kashirina, V.V. Kislyuk","doi":"10.1109/SMICND.1998.732290","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732290","url":null,"abstract":"The theoretical analysis is made for the opportunity of redistributing mobile point defects in a semiconductor affected by the electric field. It is assumed that the electric field is formed by voltage applied in two different ways: (i) directly to a sample, (ii) to a capacitor plates with a sample between.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128028979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sol-gel TiO/sub 2/(La) films as gate dielectric in MOS structures 溶胶-凝胶TiO/sub /(La)薄膜作为MOS结构中的栅极介电介质
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732350
S. Simeonov, E. Kaedjiiska, A. Szekeres, C. Parlog, M. Gartner
{"title":"Sol-gel TiO/sub 2/(La) films as gate dielectric in MOS structures","authors":"S. Simeonov, E. Kaedjiiska, A. Szekeres, C. Parlog, M. Gartner","doi":"10.1109/SMICND.1998.732350","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732350","url":null,"abstract":"1 MHz C-V and G-V characteristics of undoped and doped with La TiO/sub 2/ films prepared by sol-gel technique were measured. It was found that low concentration of La in TiO/sub 2/ leads to an increase of the dielectric permittivity and a decrease of the oxide conductance. The average density of oxide defects increases with increasing the doping concentration. La/Ti atomic ratio of 0.22 results in a dramatic decrease of permittivity and in a strong generation of acceptor-like defects.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117149971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Review and prospects for VPE, MOVPE, MBE and CBE (MOMBE) of InP and related materials InP的VPE、MOVPE、MBE和CBE (MOMBE)及其相关材料的综述与展望
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732334
A. Mircea, F. Alexandre, J. Decobert, L. Goldstein, J. Harmand, A. Ougazzaden
{"title":"Review and prospects for VPE, MOVPE, MBE and CBE (MOMBE) of InP and related materials","authors":"A. Mircea, F. Alexandre, J. Decobert, L. Goldstein, J. Harmand, A. Ougazzaden","doi":"10.1109/SMICND.1998.732334","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732334","url":null,"abstract":"The market for InP-based epitaxies is still small and the different production methods coexist. Novel sources may renew the interest in solid source MBE. In MOVPE and CBE the tendency is towards lower temperatures and increased safety. Two novel families of materials are studied. The main challenges are cheap optoelectronic devices for the subscriber access network and very high speed microelectronics.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120958359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum efficiency of [111] oriented p-doped quantum well infrared photodetectors [111]取向掺磷量子阱红外光电探测器的量子效率
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733804
M. Tadic, Z. Ikonić
{"title":"Quantum efficiency of [111] oriented p-doped quantum well infrared photodetectors","authors":"M. Tadic, Z. Ikonić","doi":"10.1109/SMICND.1998.733804","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733804","url":null,"abstract":"Orientation dependence of the bound-to-continuum absorption (quantum efficiency) in p-doped semiconductor quantum wells is calculated. As in the [100] direction, the main contribution arises from the transitions between the ground subband and continuum. Due to the larger transition matrix element absorption is 20% higher in the [111] oriented than in the [100] oriented quantum wells, and the peak is slightly shifted towards longer wavelengths.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123184917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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