F. Găiseanu, C. Postolache, D. Dascalu, J. Esteve, D. Tsoukalas, R. Jachowicz, A. Badoiu, E. Vasile
{"title":"Stress control for process optimization of the capacitive pressure sensors for biomedical applications achieved by surface micromachining technology","authors":"F. Găiseanu, C. Postolache, D. Dascalu, J. Esteve, D. Tsoukalas, R. Jachowicz, A. Badoiu, E. Vasile","doi":"10.1109/SMICND.1998.732280","DOIUrl":null,"url":null,"abstract":"An integrated structure of capacitive pressure sensor for biomedical applications achieved by surface micromachining technology, consisting in the pressure sensor and a testing component is presented. The test structure permitted to apply the pull-in voltage method for the evaluation of the residual stress in the polysilicon layer on the basis of a new form of the set of two equations describing the beam pull-in voltage effect. The integrated structure allowed the optimization of the phosphorus diffusion process to obtain low stress polysilicon membranes of the capacitive pressure sensors for biomedical applications.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732280","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
An integrated structure of capacitive pressure sensor for biomedical applications achieved by surface micromachining technology, consisting in the pressure sensor and a testing component is presented. The test structure permitted to apply the pull-in voltage method for the evaluation of the residual stress in the polysilicon layer on the basis of a new form of the set of two equations describing the beam pull-in voltage effect. The integrated structure allowed the optimization of the phosphorus diffusion process to obtain low stress polysilicon membranes of the capacitive pressure sensors for biomedical applications.