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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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Digitally controlled solar radio observations 数字控制的太阳射电观测
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733827
A. Oncica
{"title":"Digitally controlled solar radio observations","authors":"A. Oncica","doi":"10.1109/SMICND.1998.733827","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733827","url":null,"abstract":"Digitally controlled acquisition systems for solar radio telescopes are discussed from the point of view of astronomical requirements pointing out some technical specifications and experimental achievements.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126666036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of absorption and multiplication layers characteristics for high performances avalanche photodiodes on silicon and InGaAs/InP heterostructures 基于硅和InGaAs/InP异质结构的高性能雪崩光电二极管吸收和倍增层特性优化
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733801
E. Budianu, M. Purica
{"title":"Optimization of absorption and multiplication layers characteristics for high performances avalanche photodiodes on silicon and InGaAs/InP heterostructures","authors":"E. Budianu, M. Purica","doi":"10.1109/SMICND.1998.733801","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733801","url":null,"abstract":"The paper presents a detailed analysis of structure characteristics influence on the performances of avalanche photodiode with multiplication region separates from optical absorption region. SAM-APD on InGaAs/InP heterostructures and reach-through on silicon comparatively, establishing a unified calculation method for the optimum values of the doping levels, the thickness of structure layers and the width of avalanche region.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125210881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A quantum thermomechanical modeling of band offsets and Schottky barriers of semiconductor heterostructures 半导体异质结构能带偏移和肖特基势垒的量子热力学模型
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733770
H. Unlu
{"title":"A quantum thermomechanical modeling of band offsets and Schottky barriers of semiconductor heterostructures","authors":"H. Unlu","doi":"10.1109/SMICND.1998.733770","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733770","url":null,"abstract":"Using the extended universal tight binding model of semiconductors a new way of determining the band offsets and Schottky barrier heights in semiconductor heterostructures is presented. The band offsets and Schottky barriers are first determined by aligning the vacuum level, defined relative to valence band maximum and screened by optical dielectric constant of semiconductors, on both sides of heterojunction at zero temperature and standard pressure. The temperature, strain and pressure effects on band offsets and Schottky barriers are then obtained using the two statistical thermodynamic postulates: (i) the free electrons and holes are electrically charged weakly interacting quasichemical particles and (ii) the electron-hole pairs are generated by the charge transfer from bonding (valencelike) states to antibonding (conduction-like) states. Excellent agreement is obtained Between the model predictions and experiment for band offsets at interfaces between AlAs and GaAs and between HgTe and CdTe, as well as other heterojunctions and Schottky barriers.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125165946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cobalt-manganese oxide thin films thermistors obtained by MOD 用MOD制备钴锰氧化物薄膜热敏电阻
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732382
V. Dragoi, M. Alexe
{"title":"Cobalt-manganese oxide thin films thermistors obtained by MOD","authors":"V. Dragoi, M. Alexe","doi":"10.1109/SMICND.1998.732382","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732382","url":null,"abstract":"Co/sub 1.4/Mn/sub 1.6/O/sub 4/ (CMO) thin films were deposited onto silicon by Metalorganic Decomposition (MOD) method. Structure, composition and morphology were investigated by Electron Dispersive X-Ray Spectroscopy (EDX) and X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Electrical measurements showed possible applications as negative temperature coefficient (NTC) thermistors.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130454894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Broadband microwave PIN diode attenuators 宽带微波PIN二极管衰减器
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733821
S. Iordanescu, G. Simion, C. Anton, A. Muller
{"title":"Broadband microwave PIN diode attenuators","authors":"S. Iordanescu, G. Simion, C. Anton, A. Muller","doi":"10.1109/SMICND.1998.733821","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733821","url":null,"abstract":"The aim of the paper is to analyse and design variable attenuators equipped with ROV 211 chip PIN diodes. Nonlinear effects in such shunt PIN diode attenuators' are analysed, too. The attenuators are manufactured as hybrid microwave integrated circuits on soft microwave substrate. Insertion losses less than 2 dB and a dynamic range of 27 dB for two octave bandwidth were obtained.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120848569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Experimental study of aniline deposition as semiconducting polymer 苯胺沉积半导体聚合物的实验研究
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732359
M. Ghita, E. Chirea, R. Plugaru
{"title":"Experimental study of aniline deposition as semiconducting polymer","authors":"M. Ghita, E. Chirea, R. Plugaru","doi":"10.1109/SMICND.1998.732359","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732359","url":null,"abstract":"Polyaniline films, with electric properties in their oxidized form has been obtained by electrochemical and chemical methods. The electrochemical growth may be characterized as autocatalitic mechanism. The layer thickness is correlated with the number of the cycles in the deposition process. Chemical deposition yield to a blue thin polymer layer as nonconducting form, the conducting form being obtained by soaking in H/sub 2/SO/sub 4/0.1 M; 24 hours. The absorption properties in the visible-ultraviolet wavelength range of the chemical deposited layers have been investigated.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"39 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120875147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of channel dopant concentration and temperature on low-voltage VDMOS transistor ON-resistance 沟道掺杂剂浓度和温度对低压VDMOS晶体管导通电阻的影响
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732323
Z. Pavlović, I. Manic, Z. Prijić, N. Stojadinovic
{"title":"Influence of channel dopant concentration and temperature on low-voltage VDMOS transistor ON-resistance","authors":"Z. Pavlović, I. Manic, Z. Prijić, N. Stojadinovic","doi":"10.1109/SMICND.1998.732323","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732323","url":null,"abstract":"In this paper effects of the maximum dopant concentration in the channel region and temperature on the ON-resistance in low-voltage (100 V) power VDMOS transistors are investigated. Besides geometrical parameters, the ON-resistance of low-voltage VDMOS devices is mainly determined by the threshold voltage and carrier mobility values. For that reason, our theoretical considerations involve effects of dopant concentration and temperature changes on both the threshold voltage and carrier mobility behavior. Theoretical predictions for devices with channel dopant concentration in the range from 10/sup 16/ cm/sup -3/ to 10/sup 17/ cm/sup -3/ are compared with experimental measurements at temperatures between 300 K and 473 K.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127070753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Growth mechanism of light emitting silicon nanostructures 发光硅纳米结构的生长机理
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732358
R. Pluguru, G. Cracium, B. Méndez, J. Piqueras
{"title":"Growth mechanism of light emitting silicon nanostructures","authors":"R. Pluguru, G. Cracium, B. Méndez, J. Piqueras","doi":"10.1109/SMICND.1998.732358","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732358","url":null,"abstract":"Structural changes in the amorphous silicon layers have been investigated as process to obtain light emitting silicon nanostructures. It was evidenced that, under 10/sup 13/ and 10/sup 14/ cm/sup -2/ implantation, nanosized crystalline structures grow in the amorphous matrix. Cathodoluminescence spectra with an 400 nm intense band and 580, 650 weak bands are characteristic for higher dose implanted and anodized layers. The structural changes are correlated with the emission properties in the 400-670 nm range.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134241177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of bulk carrier generation-recombination centers upon the I-V characteristic of silicon PN junctions 散载流子产生-复合的影响主要集中在硅PN结的I-V特性上
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732380
V. Obreja, G. Dinoiu, E. Lakatos
{"title":"Effect of bulk carrier generation-recombination centers upon the I-V characteristic of silicon PN junctions","authors":"V. Obreja, G. Dinoiu, E. Lakatos","doi":"10.1109/SMICND.1998.732380","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732380","url":null,"abstract":"Further experiments regarding the leakage current of mesa silicon PN junctions are presented. For gold diffused junctions, generation-recombination centers lead to a dominance of the bulk leakage current component both at reverse and low forward bias voltage but a minor surface component still controls the junction blocking capability. For electron irradiated junctions, the surface component of reverse current may be the primary component up to a junction temperature of 100-150/spl deg/C. When the density of bulk generation-recombination centers is low, their influence on the reverse I-V characteristic is negligible from the room temperature up to above 200/spl deg/C.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"81 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134594724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Some peculiarities of mechanical properties of Zn/sub x/In/sub 2/S/sub 3+x/ compounds Zn/sub x/In/sub 2/S/sub 3+x/化合物力学性能的一些特点
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733784
D. Grabko, N. Palistrant, G. G. Zaitseva, V. F. Zhitari, S.J. Radautsan
{"title":"Some peculiarities of mechanical properties of Zn/sub x/In/sub 2/S/sub 3+x/ compounds","authors":"D. Grabko, N. Palistrant, G. G. Zaitseva, V. F. Zhitari, S.J. Radautsan","doi":"10.1109/SMICND.1998.733784","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733784","url":null,"abstract":"Mechanical properties of new ternary Zn/sub x/In/sub 2/S/sub 3+x/ compounds have been studied. Unusual microhardness dependence vs. load was observed. A possible explanation of this phenomenon is proposed.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134376617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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