Optimization of absorption and multiplication layers characteristics for high performances avalanche photodiodes on silicon and InGaAs/InP heterostructures

Abstract

The paper presents a detailed analysis of structure characteristics influence on the performances of avalanche photodiode with multiplication region separates from optical absorption region. SAM-APD on InGaAs/InP heterostructures and reach-through on silicon comparatively, establishing a unified calculation method for the optimum values of the doping levels, the thickness of structure layers and the width of avalanche region.