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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)最新文献

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A new device for smart power integrated circuits - the trench lateral DMOSFET 一种用于智能功率集成电路的新型器件——沟槽横向DMOSFET
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.732307
M. Zitouni, F. Morancho, H. Tranduc, P. Rossel, J. Buxo, I. Pagès
{"title":"A new device for smart power integrated circuits - the trench lateral DMOSFET","authors":"M. Zitouni, F. Morancho, H. Tranduc, P. Rossel, J. Buxo, I. Pagès","doi":"10.1109/SMICND.1998.732307","DOIUrl":"https://doi.org/10.1109/SMICND.1998.732307","url":null,"abstract":"In this paper, a new concept of lateral DMOSFET for medium voltage (<100 Volts) Smart Power Integrated Circuits is proposed. This structure called LUDMOSFET features a reduced specific on-resistance and enhanced breakdown voltage. For example, for a breakdown voltage of 50 V, the specific on-resistance is 1.2 m/spl Omega/.cm/sup 2/ in the conventional LDMOSFET, 0.8 m/spl Omega/.cm/sup 2/ in the LUDMOS without polysilicon (i.e. 30 percent reduction) and 0.6 m/spl Omega/.cm/sup 2/ in the LUDMOS with polysilicon (i.e. 50 percent reduction).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126989802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Parallel domain decomposition for 3D semiconductor device simulation 三维半导体器件仿真的并行域分解
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733765
G. Antonoiu, G. Dima, M. Profirescu
{"title":"Parallel domain decomposition for 3D semiconductor device simulation","authors":"G. Antonoiu, G. Dima, M. Profirescu","doi":"10.1109/SMICND.1998.733765","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733765","url":null,"abstract":"The paper presents a distributed 3D device simulator running on network workstations interconnected via Ethernet. The simulator is based on parallel domain decomposition and the inter-process communication is accomplished using the MPI library. The implementation shows that a well designed distributed simulator can reduce the execution time up to an order of magnitude.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116780090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Near-the-edge absorption of A/sub 3//sup II/B/sub 2//sup III/C/sub 6//sup VI/ sulphides A/sub 3//sup II/B/sub 2//sup III/C/sub 6//sup VI/硫化物的近边吸收
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733799
E. Arama, V.F. Zhitar, S.I. Radautsan
{"title":"Near-the-edge absorption of A/sub 3//sup II/B/sub 2//sup III/C/sub 6//sup VI/ sulphides","authors":"E. Arama, V.F. Zhitar, S.I. Radautsan","doi":"10.1109/SMICND.1998.733799","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733799","url":null,"abstract":"The optical absorption spectra of Zn/sub 3/In/sub 2/S/sub 6/, Zn/sub 3/InGaS/sub 6/ and Zn/sub 3/InAlS/sub 6/ monocrystals obtained by iodide transportation have been investigated within the temperature range between 80 K and 300 K. The analysis of the results obtained allow us to conclude that the frequency dependence of the absorption coefficient follows the Urbah law for all the mentioned compounds and that they all are the direct-band semiconductors.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128459800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A physical and electrical switched capacitor filter design environment 一个物理和电气开关电容滤波器的设计环境
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733789
M. Padure
{"title":"A physical and electrical switched capacitor filter design environment","authors":"M. Padure","doi":"10.1109/SMICND.1998.733789","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733789","url":null,"abstract":"This paper presents a switched-capacitor filters design environment. The electrical design support is based on two simulators front public domain: Spice3f5 and Switcap. The physical design flow is based on a set of analog specific constraints for stack generation, placing and routing of analog blocks. A high-Q band-pass filter practical design example is presented in order to illustrate the ability of the environment to generate optimal analog building blocks with minimum time expense.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134436544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits 高频双极集成电路的低寄生元件和自对准触点技术
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733817
M. Badila, C. Codreanu, G. Brezeanu, B. Marinescu, A.M. Stoica
{"title":"Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits","authors":"M. Badila, C. Codreanu, G. Brezeanu, B. Marinescu, A.M. Stoica","doi":"10.1109/SMICND.1998.733817","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733817","url":null,"abstract":"A new high performance technology (with low parasitic elements) for high frequency bipolar circuits is proposed. The new technologies upgrade a classical \"LISA\" (local implantation self aligned) technology using a 14 masks process. The demonstrator circuits are a \"Gilbert\" cell, and some broad band high frequency amplifiers.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"36 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114043062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
ZnO/InP thin film heterojunction for photovoltaic applications 光伏应用的ZnO/InP薄膜异质结
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733800
M. Purica, E. Rusu, E. Budianu, S. Nan
{"title":"ZnO/InP thin film heterojunction for photovoltaic applications","authors":"M. Purica, E. Rusu, E. Budianu, S. Nan","doi":"10.1109/SMICND.1998.733800","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733800","url":null,"abstract":"A ZnO/InP heterojunction was obtained by the ZnO thin film deposition on p-InP epitaxial layer by the decomposition of metalorganic compounds as Zn acetylacetonate. The surface morphology and measurements of optoelectronical parameters in visible spectral range demonstrate the utility of this heterojunction in photodetection and photovoltaic applications.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115843373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Looking for the lost noise 寻找丢失的声音
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733816
G. Stefan
{"title":"Looking for the lost noise","authors":"G. Stefan","doi":"10.1109/SMICND.1998.733816","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733816","url":null,"abstract":"The noise can be very well approximated using a simple circuit and a sophisticated rule. We propose a simple, recursively defined, big circuit that, starting from own autonomy, generates pseudo-noise. To the well known method of using cellular automaton in order to generate pseudo-random sequences some new features are added in order to improve the \"random\" behaviour. The randomness results in a chaotic process, very sensible to the initial state of a simple machine working after a strange rule. The proposed structure claims a huge amount of work in order to find an appropriate initial state according to tire noise \"characteristics\". The initial state must be selected from a space having 2/sup 256/ points. Only the genetic algorithms offers us the illusion of finding the best point in this huge space.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115472813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A broadband monolithic millimeter wave frequency tripler by using bbBNN varactor diodes 利用bbBNN变容二极管的宽带单片毫米波三倍频器
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733822
S. Simion
{"title":"A broadband monolithic millimeter wave frequency tripler by using bbBNN varactor diodes","authors":"S. Simion","doi":"10.1109/SMICND.1998.733822","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733822","url":null,"abstract":"In this paper, a new type of frequency tripler operating into the millimeter wave frequency range consisting of an array of bbBNN varactor diodes loading a slotline, is firstly described and then analysed by computer simulation. Due to the symmetry of the capacitance versus the voltage for these types of diodes, the second harmonics cannot propagate along the circuit toward the output, as such the conversion efficiency to the third harmonics is improved. It is also demonstrated that for this type of frequency tripler, a good conversion efficiency may be obtained for a large input frequency range.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114817702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Conformity optimization for metal interconnections in MOS technologies MOS技术中金属互连的一致性优化
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733757
I. Cernica, C. Dunare, E. Manea, G. Ionascu, S. Dunare
{"title":"Conformity optimization for metal interconnections in MOS technologies","authors":"I. Cernica, C. Dunare, E. Manea, G. Ionascu, S. Dunare","doi":"10.1109/SMICND.1998.733757","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733757","url":null,"abstract":"Presented study was focus on optimization of planarization and metal conformity on steps in MOS technology. The experiment regards a three fold problem: the structure of the planarization silicon dioxide thin film in order to optimized the slope of the contact windows, the metal used and the conformity of metal interconnections. We studied the profiles of contact windows configured in several composed silicon dioxide films (thermal SiO/sub 2/ and APCVD SiO/sub 2/) using /spl alpha/-step measurements. Then, after metal deposition and configuration we observed by SEM investigations the conformity of metal films on steps (contact, cracking, thinning on edge of the window). Finally, we proposed a sequence of composed planarization film (thermal SiO/sub 2/ and APCVD SiO/sub 2/ undoped and phosphorous doped) and metallization proved by /spl alpha/-step, SEM and functional investigations to be an optimized solution.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114671471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetostatic wave transducers on silicon wafers and on silicon membranes 硅片和硅膜上的静磁波换能器
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI: 10.1109/SMICND.1998.733831
E. Matei, G. Sajin, V. Avramescu, M. Dragoman, R. Marcelli
{"title":"Magnetostatic wave transducers on silicon wafers and on silicon membranes","authors":"E. Matei, G. Sajin, V. Avramescu, M. Dragoman, R. Marcelli","doi":"10.1109/SMICND.1998.733831","DOIUrl":"https://doi.org/10.1109/SMICND.1998.733831","url":null,"abstract":"The paper presents the design, realisation and experiments of MSW launchers and detectors made on silicon wafers and silicon membranes. S parameters measurement on ferrite unloaded and on magnetised ferrite loaded structures demonstrates the feasibility of such transducer. Using the silicon membranes to support these devices offers the advantage of miniaturisation, with important openings toward microwave circuit integration on semiconductor substrate.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126224052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
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