高频双极集成电路的低寄生元件和自对准触点技术

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733817

M. Badila, C. Codreanu, G. Brezeanu, B. Marinescu, A.M. Stoica

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引用次数: 0

摘要

提出了一种新的高性能(低寄生元件)高频双极电路技术。新技术升级了经典的“LISA”(局部植入自对准)技术，使用14个掩模过程。演示电路是一个“吉尔伯特”单元和一些宽带高频放大器。

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Low parasitic elements and self aligned contacts technology for high frequency bipolar integrated circuits

A new high performance technology (with low parasitic elements) for high frequency bipolar circuits is proposed. The new technologies upgrade a classical "LISA" (local implantation self aligned) technology using a 14 masks process. The demonstrator circuits are a "Gilbert" cell, and some broad band high frequency amplifiers.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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