MOS技术中金属互连的一致性优化

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733757

I. Cernica, C. Dunare, E. Manea, G. Ionascu, S. Dunare

{"title":"MOS技术中金属互连的一致性优化","authors":"I. Cernica, C. Dunare, E. Manea, G. Ionascu, S. Dunare","doi":"10.1109/SMICND.1998.733757","DOIUrl":null,"url":null,"abstract":"Presented study was focus on optimization of planarization and metal conformity on steps in MOS technology. The experiment regards a three fold problem: the structure of the planarization silicon dioxide thin film in order to optimized the slope of the contact windows, the metal used and the conformity of metal interconnections. We studied the profiles of contact windows configured in several composed silicon dioxide films (thermal SiO/sub 2/ and APCVD SiO/sub 2/) using /spl alpha/-step measurements. Then, after metal deposition and configuration we observed by SEM investigations the conformity of metal films on steps (contact, cracking, thinning on edge of the window). Finally, we proposed a sequence of composed planarization film (thermal SiO/sub 2/ and APCVD SiO/sub 2/ undoped and phosphorous doped) and metallization proved by /spl alpha/-step, SEM and functional investigations to be an optimized solution.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Conformity optimization for metal interconnections in MOS technologies\",\"authors\":\"I. Cernica, C. Dunare, E. Manea, G. Ionascu, S. Dunare\",\"doi\":\"10.1109/SMICND.1998.733757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presented study was focus on optimization of planarization and metal conformity on steps in MOS technology. The experiment regards a three fold problem: the structure of the planarization silicon dioxide thin film in order to optimized the slope of the contact windows, the metal used and the conformity of metal interconnections. We studied the profiles of contact windows configured in several composed silicon dioxide films (thermal SiO/sub 2/ and APCVD SiO/sub 2/) using /spl alpha/-step measurements. Then, after metal deposition and configuration we observed by SEM investigations the conformity of metal films on steps (contact, cracking, thinning on edge of the window). Finally, we proposed a sequence of composed planarization film (thermal SiO/sub 2/ and APCVD SiO/sub 2/ undoped and phosphorous doped) and metallization proved by /spl alpha/-step, SEM and functional investigations to be an optimized solution.\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.733757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

重点研究了MOS工艺中各工序的平面化和金属整合优化问题。实验涉及到三个方面的问题:为优化接触窗斜率而设计的平面化二氧化硅薄膜的结构、所使用的金属以及金属互连的一致性。我们使用/spl alpha/-步长测量方法研究了几种合成二氧化硅薄膜(热SiO/ sub2 /和APCVD SiO/ sub2 /)中配置的接触窗的分布。然后，在金属沉积和配置后，我们通过扫描电镜观察了金属薄膜在步骤上的一致性(接触，开裂，窗口边缘变薄)。最后，我们提出了一系列的复合平面化膜(热SiO/ sub2 /和APCVD SiO/ sub2 /未掺杂和磷掺杂)和金属化，并通过/spl alpha/-step, SEM和功能研究证明了这是一个优化的解决方案。

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Conformity optimization for metal interconnections in MOS technologies

Presented study was focus on optimization of planarization and metal conformity on steps in MOS technology. The experiment regards a three fold problem: the structure of the planarization silicon dioxide thin film in order to optimized the slope of the contact windows, the metal used and the conformity of metal interconnections. We studied the profiles of contact windows configured in several composed silicon dioxide films (thermal SiO/sub 2/ and APCVD SiO/sub 2/) using /spl alpha/-step measurements. Then, after metal deposition and configuration we observed by SEM investigations the conformity of metal films on steps (contact, cracking, thinning on edge of the window). Finally, we proposed a sequence of composed planarization film (thermal SiO/sub 2/ and APCVD SiO/sub 2/ undoped and phosphorous doped) and metallization proved by /spl alpha/-step, SEM and functional investigations to be an optimized solution.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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