用MOD制备钴锰氧化物薄膜热敏电阻

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732382

V. Dragoi, M. Alexe

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引用次数: 1

摘要

采用金属有机分解(MOD)法制备了Co/sub 1.4/Mn/sub 1.6/O/sub 4/ (CMO)薄膜。采用电子色散x射线能谱(EDX)、x射线衍射(XRD)和扫描电镜(SEM)对其结构、组成和形貌进行了表征。电学测量显示了负温度系数(NTC)热敏电阻的可能应用。

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Cobalt-manganese oxide thin films thermistors obtained by MOD

Co/sub 1.4/Mn/sub 1.6/O/sub 4/ (CMO) thin films were deposited onto silicon by Metalorganic Decomposition (MOD) method. Structure, composition and morphology were investigated by Electron Dispersive X-Ray Spectroscopy (EDX) and X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). Electrical measurements showed possible applications as negative temperature coefficient (NTC) thermistors.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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