基于硅和InGaAs/InP异质结构的高性能雪崩光电二极管吸收和倍增层特性优化

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733801

E. Budianu, M. Purica

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引用次数: 0

摘要

本文详细分析了倍增区与光吸收区分离的雪崩光电二极管的结构特性对其性能的影响。比较了SAM-APD在InGaAs/InP异质结构上和在硅上的通达性，建立了掺杂水平、结构层厚度和雪崩区宽度的最佳值的统一计算方法。

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Optimization of absorption and multiplication layers characteristics for high performances avalanche photodiodes on silicon and InGaAs/InP heterostructures

The paper presents a detailed analysis of structure characteristics influence on the performances of avalanche photodiode with multiplication region separates from optical absorption region. SAM-APD on InGaAs/InP heterostructures and reach-through on silicon comparatively, establishing a unified calculation method for the optimum values of the doping levels, the thickness of structure layers and the width of avalanche region.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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