Growth mechanism of light emitting silicon nanostructures

Abstract

Structural changes in the amorphous silicon layers have been investigated as process to obtain light emitting silicon nanostructures. It was evidenced that, under 10/sup 13/ and 10/sup 14/ cm/sup -2/ implantation, nanosized crystalline structures grow in the amorphous matrix. Cathodoluminescence spectra with an 400 nm intense band and 580, 650 weak bands are characteristic for higher dose implanted and anodized layers. The structural changes are correlated with the emission properties in the 400-670 nm range.