A. Belyaev, G. E. Chaika, I. Il’in, R. Konakova, V. Lyapin, V.V. Milenin, O.E. Rengevych, E. Soloviev, M. Tagaev, D.I. Voitsikhovskiy
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Effect of /spl gamma/-radiation on the transition layer in metal-semiconductor contacts
An effect of /spl gamma/-radiation on atomic diffusion in the metal-semiconductor heterostructures is considered theoretically. Diffusion of impurities into the transition layer results in the potential redistribution between the depletion and the transition layers. An excess current through the barrier via an "intermediate" level occurs. The calculated results are compared with the experimental data.
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