电场引起半导体中移动带电供体的再分配

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732290

M. Sheinkman, N. Kashirina, V.V. Kislyuk

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引用次数: 0

摘要

从理论上分析了受电场影响的半导体中移动点缺陷重分布的机会。假设电场是由电压以两种不同的方式施加形成的:(i)直接施加到样品上，(ii)施加到电容板上，中间有样品。

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Electric field-caused redistribution of mobile charged donors in semiconductors

The theoretical analysis is made for the opportunity of redistributing mobile point defects in a semiconductor affected by the electric field. It is assumed that the electric field is formed by voltage applied in two different ways: (i) directly to a sample, (ii) to a capacitor plates with a sample between.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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