关于双向雷涌保护装置的工作方式

D. Flores, X. Jordà, S. Hidalgo, J. Fernandez, J. Millán
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引用次数: 1

摘要

现代电信设备必须防止雷击或电容耦合产生的高电压、长时间干扰。功率半导体器件通常用于高达4kv, 150a瞬态峰值的并联保护。本文分析了优化后的双向导通二极管(BBD)的工作模式,并报道了已制成的保持电流在150-250 mA范围内的180 V双向导通二极管(BBD)的实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the operation mode of bidirectional lightning surge protection devices
Modern telecommunication equipment has to be protected from high voltage, long period disturbances produced by lightning shocks or capacitive coupling. Power semiconductor devices are commonly used in parallel protection up to 4 kV, 150 A transient peaks. This paper analyses the operation mode of an optimised bidirectional breakover diode (BBD) and experimental results are reported from fabricated 180 V BBD devices with holding current values in the range of 150-250 mA.
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