High temperature Ti-Al-based ohmic contacts to p-6H-SiC

Abstract

Low-resistance ohmic contacts (10/sup -4/ Ohm cm/sup 2/ at N/sub a/-N/sub d/=10/sup 19/ cm/sup -3/) based on Ti-Al composition were prepared to p-6H-SiC grown by various techniques. This contacts demonstrate exellent reproductivity and the ones can operate at the environment temperatures up to 550/spl deg/C and densities of direct current up to 10/sup 4/ A/cm/sup 2/. Structure and composition of contact coating were studied by AES and SIMS layer-by-layer technique and X-ray phase analysis. Advanced study of electrical characteristic of Ti-Al-based ohmic contacts was carried out.