{"title":"Model of electron field emission from Si through SiO/sub 2/","authors":"V. Filip, D. Nicolaescu, F. Okuyama, J. Itoh","doi":"10.1109/SMICND.1998.733833","DOIUrl":null,"url":null,"abstract":"The field electron emission from Si occurring through a SiO/sub 2/ layer is considered. The applied electric field may produce electron accumulations near the emitting site and a reduction of the effective emitting surface area. The effect is stimulated by the oxide thickness increase.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The field electron emission from Si occurring through a SiO/sub 2/ layer is considered. The applied electric field may produce electron accumulations near the emitting site and a reduction of the effective emitting surface area. The effect is stimulated by the oxide thickness increase.