TiO/sub 2/ anodic oxide films for oxygen gas sensors

Abstract

This paper presents a method used to produce TiO/sub 2/ sensitive layers based on the selective anodization of the titanium thin film realised by vacuum evaporation. Photoresist was used as mask for anodization. The thickness of the TiO/sub 2/ layers obtained in this experiment was between 1000-1200 /spl Aring/. IR and X-ray investigation were performed in order to characterize the structure of the layer. Sensitivity to O/sub 2/ was measured using a dedicated micromachine silicon structure. A quasilinear dependence of the resistivity of the TiO/sub 2/ layer versus the O/sub 2/ concentration was observed in the range of 100-10000 ppm.