Dependence of SiC/SiO/sub 2/ interface quality on substrate and dopant type

Abstract

We investigated the electrical properties of dry thermal oxide on n and p-type Si-faced 6H and 4H-SiC wafers using capacitance-voltage measurements. The experimental CV data have been compared with simulated CV curves including oxide charge and interface state density determined previously using the conductance technique including band bending fluctuations.