A. Strel'chuk, V. Kozlovski, N. Savkina, M. Rastegaeva, A. Andreev
{"title":"质子辐照6H-SiC pn结构中非平衡载流子的稳态寿命","authors":"A. Strel'chuk, V. Kozlovski, N. Savkina, M. Rastegaeva, A. Andreev","doi":"10.1109/SMICND.1998.732390","DOIUrl":null,"url":null,"abstract":"The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10/sup -6/<J<10/sup 0/ A/cm/sup 2/. The irradiation dose 3.6 10/sup 14/ cm/sup -2/ decreased the lifetime of nonequilibrium carriers for deep-level recombination in the space charge region by up to 2 orders of magnitude. The irradiation dose of 1.8 10/sup 15/ cm/sup -2/, or anneal in the range 300-800 K did not change the lifetime.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures\",\"authors\":\"A. Strel'chuk, V. Kozlovski, N. Savkina, M. Rastegaeva, A. Andreev\",\"doi\":\"10.1109/SMICND.1998.732390\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10/sup -6/<J<10/sup 0/ A/cm/sup 2/. The irradiation dose 3.6 10/sup 14/ cm/sup -2/ decreased the lifetime of nonequilibrium carriers for deep-level recombination in the space charge region by up to 2 orders of magnitude. The irradiation dose of 1.8 10/sup 15/ cm/sup -2/, or anneal in the range 300-800 K did not change the lifetime.\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"119 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.732390\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Steady-state lifetime of the nonequilibrium carriers in proton irradiated 6H-SiC pn structures
The effect of proton irradiation on the value of the steady state lifetime of the nonequilibrium carriers in 6H-SiC epitaxial pn structures was investigated. The lifetime was determined as parameter of the Sah-Noyce-Shockley model, which was used for interpretation of the forward currents at current densities 10/sup -6/