热处理金属化合物半导体结构的分形特性

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733835

B. Kovács, L. Dobos, I. Mojzes, M. Schuszter

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引用次数: 0

摘要

采用原位扫描电镜结合质谱法研究了金属化Au(10 nm)/InP(100)、Au(30 nm)/InP(100)、Au(85 nm)/InP(100)结构的热处理。发现表面形貌与热处理过程中材料相互作用引起的挥发性组分损失之间存在相关性。早期的实验证明，表面形貌可以用其分形维数来表征。本文叙述了表面图案的分形维数与热处理温度和金属厚度的关系。

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Fractal properties of heat treated metal-compound semiconductor structures

The heat treatment of metallized Au(10 nm)/InP(100), Au(30 nm)/InP(100), Au(85 nm)/InP(100) structures were studied by in situ scanning electron microscopy combined with mass spectrometry. Correlation was found between the surface morphology and the volatile component loss caused by the material interactions taking place during the heat treatment. Earlier experiments proved that the surface morphology can be characterized by its fractal dimension. In this paper the dependence of the fractal dimension of the surface pattern on the heat treatment temperature and on the metal thickness is described.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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