氧化过程对多孔硅光致发光的影响

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733776

T.V. Torchinskaya, N.E. Korsunskaya, M. Sheĭnkman, L. Khomenkova, A.L. Kapitanchuk, Y. Goldstein, E. Savir, A. Many

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引用次数: 2

摘要

研究了制备工艺对氧化物组成、悬空键数和光致发光光谱的影响。研究了多孔硅在NaCl电解液中附加阳极氧化过程对光致发光光谱和电致发光光谱的影响。

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Oxidation process effects on porous silicon photoluminescence

The effect of preparation regimes on the oxide composition, the number of dangling bonds and photoluminescence spectra have been investigated. The influence of the oxidation process during additional anodization of porous silicon in NaCl electrolyte on photo- and electroluminescence spectra have been studied also.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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