The flatband potential and the rectification in the system ZnIn/sub 2/S/sub 4/-H/sub 2/O(S/sup 2-//S/sub 2//sup 2-/)

Abstract

The electric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The dependencies of the flatband potential and of the contact potential at the ZnIn/sub 2/S/sub 4/-electrolyte interface on the concentration of S/sup 2-/ and S/sub 2//sup 2-/ ions were studied. The current-voltage characteristics of the electrolyte-ZnI/sub 2/S/sub 4/ contact are determined by the potential barrier which is formed in the semiconductor near the interface.