ZnIn/sub 2/S/sub 4/- h /sub 2/O(S/sup 2-/ S/sub 2//sup 2-/)系统中的平带电位和整流

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733785

I. Tsiulyanu, A. Simashkevich, A. Sprinchean, R. Lyalikova

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引用次数: 0

摘要

研究了金属辅助电极-电解质-多层半导体链中电解质-半导体界面的电学性质。研究了S/sup 2-/和S/sup 2//sup 2-/离子浓度对ZnIn/sub 2/S/sub 4 - -电解质界面平面带电位和接触电位的影响。电解质- zni /sub 2/S/sub 4/触点的电流-电压特性由界面附近半导体中形成的势垒决定。

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The flatband potential and the rectification in the system ZnIn/sub 2/S/sub 4/-H/sub 2/O(S/sup 2-//S/sub 2//sup 2-/)

The electric properties of the electrolyte-semiconductor interface in the chains formed by metal auxiliary electrode-electrolyte-multinary layered semiconductors have been investigated. The dependencies of the flatband potential and of the contact potential at the ZnIn/sub 2/S/sub 4/-electrolyte interface on the concentration of S/sup 2-/ and S/sub 2//sup 2-/ ions were studied. The current-voltage characteristics of the electrolyte-ZnI/sub 2/S/sub 4/ contact are determined by the potential barrier which is formed in the semiconductor near the interface.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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