非晶Ge-S-Ga半导体的微观结构特征

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733782

Vesela Pamukcheva, G. Ivanova, Ventzislav, Vassilev

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引用次数: 0

摘要

研究了微孔体积(Vh)、形成能(Eh)和弹性模量(E)随非晶Ge-S-Ga薄膜(蒸发态和紫外暴露态)组成的变化规律。这些参数在照明后最显著的变化是观察到/spl sim/10在% Ga的GeS/sub 2/基组合物。将得到的结果与考虑平均配位数(Z)的Ge/sub 90-x/S/sub x/Ga/sub 10/ bulk玻璃的结果进行了比较，发现了Z/spl sim/2.7处的特定特征，这可能与Z值附近的拓扑阈值和化学阈值共存有关。

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Microstructural features in amorphous Ge-S-Ga semiconductors

Variation of the micro-voids volume (Vh), their formation energy (Eh), and module of elasticity (E) with the composition of amorphous Ge-S-Ga films (as-evaporated and UV-exposed) has been studied. Most pronounced change in these parameters after illumination has been observed at GeS/sub 2/-based compositions with /spl sim/10 at% Ga. The obtained results are compared with those of Ge/sub 90-x/S/sub x/Ga/sub 10/ bulk glasses, taking into account the average coordination number (Z). Specific features at Z/spl sim/2.7 have been found, which can be related to the coexistence of topological and chemical thresholds around this value of Z.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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