多孔硅层上的金属接触

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733775

A. Angelescu, I. Kleps

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引用次数: 4

摘要

本文研究了多孔硅层上金属触点的电学性能，旨在确定最合适的触点材料和发光器件的制备条件。在不同的制备条件下，使用Au、In、Au-In、In- sn、Al等不同的材料作为PS层上的固体触点。利用肖特基二极管理论分析了不同金属/PS/Si结构的实验I-V特性。

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Metallic contacts on porous silicon layers

The electrical properties of metallic contacts on porous silicon layers have been investigated with the aim to establish the most suitable contact material and preparation conditions for light emission devices. Different materials as: Au, In, Au-In, In-Sn, Al in a variety of preparation conditions have been used as a solid contact on the PS layers. The experimental I-V characteristics of different metal/PS/Si structures are analyzed by theory of Schottky diodes.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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