Experiments on electron-beam irradiation effects on junction field effect transistors

Abstract

The paper describes some results concerning electron-beam irradiation effects on dual monolithic n-channel junction field effect transistors. Devices were gradually irradiated up to 8 Mrad in steps of 1 Mrad or 2 Mrad at room temperature. After each irradiation operation, their electrical parameters were measured and finally we have analyzed the structural modifications in devices and their irradiation hardness.