电子束辐照结场效应晶体管的实验研究

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732373

C. Codreann, E. Iliescu

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引用次数: 0

摘要

本文介绍了电子束辐照对双单片n沟道结场效应晶体管的影响。在室温下，以1 Mrad或2 Mrad的步骤逐渐照射器件至8 Mrad。在每次辐照操作后，测量了器件的电学参数，并分析了器件的结构变化和辐照硬度。

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Experiments on electron-beam irradiation effects on junction field effect transistors

The paper describes some results concerning electron-beam irradiation effects on dual monolithic n-channel junction field effect transistors. Devices were gradually irradiated up to 8 Mrad in steps of 1 Mrad or 2 Mrad at room temperature. After each irradiation operation, their electrical parameters were measured and finally we have analyzed the structural modifications in devices and their irradiation hardness.

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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