选择性辐照提高大功率晶闸管的恢复特性

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.732377

V. Banu, E. Iliescu, A. Niculescu, M. Apostolescu, N. Sturzu

{"title":"选择性辐照提高大功率晶闸管的恢复特性","authors":"V. Banu, E. Iliescu, A. Niculescu, M. Apostolescu, N. Sturzu","doi":"10.1109/SMICND.1998.732377","DOIUrl":null,"url":null,"abstract":"A method to improve the switching time of the fast high power thyristors is described. The task is to obtain low turn off time with a rate of the reapplied voltage of 400 V//spl mu/s. The method combines the gold diffusion with the localized electron irradiation. This is a good compromise to obtain the required limits for both V/sub T/ and I/sub R/ (125/spl deg/C).","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"199 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of the recovery characteristics of high power thyristors by selective irradiation\",\"authors\":\"V. Banu, E. Iliescu, A. Niculescu, M. Apostolescu, N. Sturzu\",\"doi\":\"10.1109/SMICND.1998.732377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method to improve the switching time of the fast high power thyristors is described. The task is to obtain low turn off time with a rate of the reapplied voltage of 400 V//spl mu/s. The method combines the gold diffusion with the localized electron irradiation. This is a good compromise to obtain the required limits for both V/sub T/ and I/sub R/ (125/spl deg/C).\",\"PeriodicalId\":406922,\"journal\":{\"name\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"volume\":\"199 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1998.732377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.732377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了一种提高高速大功率晶闸管开关时间的方法。任务是获得低关断时间，再加电压率为400 V//spl mu/s。该方法将金扩散与局部电子辐照相结合。这是一个很好的折衷方案，可以获得V/sub T/和I/sub R/ (125/spl°/C)所需的限值。

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Improvement of the recovery characteristics of high power thyristors by selective irradiation

A method to improve the switching time of the fast high power thyristors is described. The task is to obtain low turn off time with a rate of the reapplied voltage of 400 V//spl mu/s. The method combines the gold diffusion with the localized electron irradiation. This is a good compromise to obtain the required limits for both V/sub T/ and I/sub R/ (125/spl deg/C).

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来源期刊

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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