百MeV离子辐照对硅中掺杂物深度分布的影响

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) Pub Date : 1998-10-06 DOI:10.1109/SMICND.1998.733832

E. P. Neustroev, I. Antonova, H.Yu. Didyk, N. Dinu, V. Skuratov

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引用次数: 0

摘要

研究了430 MeV氪和614 MeV Xe离子辐照对硅晶体中掺杂物(Al, As, Sb, Ga, Bi)谱线的影响。由于辐照，发现掺杂剂的再分布，其中锑和铋掺杂剂的影响最为明显。观察到的效应可归因于高能离子辐照(HEII)在离子径迹范围内引入的损伤结构增强了掺杂剂的扩散。

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Hundred MeV ion irradiation effect on dopant depth profiles in silicon

The effect of 430 MeV Kr and 614 MeV Xe ion irradiation on the dopant (Al, As, Sb, Ga, Bi) profiles in silicon crystals has been investigated. It has been found a dopant redistribution as a result of this irradiation and the most pronounced effect was seen for Sb and Bi dopants. The observed effect could be attributed to an enhanced diffusion of dopants due to damage structure introduced by high-energy ion irradiation (HEII) in ion track range.

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1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)

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