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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

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InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB AT 94 GHz 在94 GHz时最小噪声系数为1.0 dB的InAlAs/InGaAs hemt
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381121
T. Takahashi, M. Sato, K. Makiyama, T. Hirose, N. Hara
{"title":"InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB AT 94 GHz","authors":"T. Takahashi, M. Sato, K. Makiyama, T. Hirose, N. Hara","doi":"10.1109/ICIPRM.2007.381121","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381121","url":null,"abstract":"The authors achieved a minimum noise figure (NFmin) of 1.0 dB at 94 GHz using 110 nm-gate InAlAs/InGaAs HEMTs with a thin Schottky barrier layer. The obtained NFmin is one of the lowest values ever reported for HEMTs. This low-noise property is promising for applications involving millimeter-wave communications and image sensors.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125499269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer 退火后对砷化镓缓冲层上InAs量子点发射特性的影响
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381185
R. Suzuki, T. Miyamoto, F. Koyama
{"title":"Post-Annealing Effects on Emission Characteristics of InAs Quantum Dots on GaNAs Buffer Layer","authors":"R. Suzuki, T. Miyamoto, F. Koyama","doi":"10.1109/ICIPRM.2007.381185","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381185","url":null,"abstract":"Thermal annealing effects on PL characteristics of MOCVD grown InAs QD on GaNAs buffer layers were investigated. By using GaNAs buffer, the suppression of PL intensity degradation due to the crystalline improvement of GaNAs was observed.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125533098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Epitaxial Lateral Overgrowth of InP in Micro Line and Submicro Mesh Openings 微线和亚微网开口中InP的外延横向过度生长
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381186
F. Olsson, M. Xie, F. Gerard, A. R. Alija, I. Prieto, P. Postigo, S. Lourdudoss
{"title":"Epitaxial Lateral Overgrowth of InP in Micro Line and Submicro Mesh Openings","authors":"F. Olsson, M. Xie, F. Gerard, A. R. Alija, I. Prieto, P. Postigo, S. Lourdudoss","doi":"10.1109/ICIPRM.2007.381186","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381186","url":null,"abstract":"Towards achieving a large area of InP on silicon, a study of ELOG of InP on InP has been undertaken on lines with different orientations and with openings that are 100 mum long and 10 mum wide. This knowledge has been transposed on sub-micro mesh structures. By this method we have obtained 2 mum thick InP on a mesh patterned InP. The layer exhibits room temperature photoluminescence (PL) with a full width half maximum of 24 nm. We propose that this intensity can be increased if nano-sized openings are used.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130362482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE Zn和s掺杂对GaAs选择性区MOVPE动力学的影响
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381188
Haizheng Song, Yunpeng Wang, M. Sugiyama, Y. Nakano, Y. Shimogaki
{"title":"Effects of Zn- and S-Doping on Kinetics of GaAs Selective Area MOVPE","authors":"Haizheng Song, Yunpeng Wang, M. Sugiyama, Y. Nakano, Y. Shimogaki","doi":"10.1109/ICIPRM.2007.381188","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381188","url":null,"abstract":"The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650degC. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130364968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy 金属有机气相外延生长InP/InAs核心-多壳异质结构纳米线
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381204
T. Fukui, P. Mohan, J. Motohisa
{"title":"InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy","authors":"T. Fukui, P. Mohan, J. Motohisa","doi":"10.1109/ICIPRM.2007.381204","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381204","url":null,"abstract":"We report the growth and characteristics of InP nanowires and InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. InP hexagonal nanowires with (110) sidewall facets were successfully formed on (111)B InP substrates. The core-multishell nanowires were also formed composed of InAs tube-like layer buried in a higher bandgap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all the three layers were epitaxially grown without the assistance of any catalyst. The periodically aligned nanowires and core-multishell nanowires were highly uniform, and Wulzaite structures. 4 K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP (110) sidewalls and the well widths corresponding to the PL peaks were in good agreement with calculated values.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130439258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Power and Wide Tuning Range External Cavity Wavelength Tunable Laser 高功率、宽调谐范围外腔波长可调谐激光器
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381259
K. Kudo, K. Sato
{"title":"High Power and Wide Tuning Range External Cavity Wavelength Tunable Laser","authors":"K. Kudo, K. Sato","doi":"10.1109/ICIPRM.2007.381259","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381259","url":null,"abstract":"This paper reviews our recent activities on the development of high performance full-band wavelength tunable lasers. Our approach utilizes an external cavity configuration, which makes use of a liquid crystal (LC) tunable mirror. We also describe a gap mirror technology for integrating a functional section onto a laser gain chip. A semiconductor optical amplifier, implementing several functions, is integrated on the gain chip used in an external cavity laser, and demonstrated as a high-performance variable attenuator and booster amplifier. Control of the mirror properties through the gap geometry is demonstrated, and further optimization is realized by a gap-filling technique, which increases the output power to above 100 mW across the C-band.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120936902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polarization Effects of Ecitation Light Source on Photoluminescence Spectra of INGAASP/INP Quantum Well Structures 激发光源对INGAASP/INP量子阱结构光致发光光谱的极化效应
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381133
H. Imai, A. Motomura
{"title":"Polarization Effects of Ecitation Light Source on Photoluminescence Spectra of INGAASP/INP Quantum Well Structures","authors":"H. Imai, A. Motomura","doi":"10.1109/ICIPRM.2007.381133","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381133","url":null,"abstract":"We have observed the photoluminescence (PL) spectra of InGaAsP/InP quantum well structures. PL spectra peak movements for TE or TM mode excitation are observed by changing the incident angle of the excitation light. The PL spectra peak for TM mode excitation moves toward the longer wavelength as compared with that estimated by the heat dissipation.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124485386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Advances and Prospects of Quantum Dot Devices for Information Technologies 信息技术中量子点器件的进展与展望
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.380675
Y. Arakawa
{"title":"Advances and Prospects of Quantum Dot Devices for Information Technologies","authors":"Y. Arakawa","doi":"10.1109/ICIPRM.2007.380675","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380675","url":null,"abstract":"We address recent advances and prospects of nanophotonic devices based on quantum dots toward highly-efficient and highly-secured information technologies. The discussion includes high-performance quantum dot lasers for broadband network and quantum information device such as single photon emitters.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122495912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultrafast Efficient Photodiodes Exceeding 100 GHz Bandwidth 带宽超过100ghz的超快高效光电二极管
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381125
H. Bach
{"title":"Ultrafast Efficient Photodiodes Exceeding 100 GHz Bandwidth","authors":"H. Bach","doi":"10.1109/ICIPRM.2007.381125","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381125","url":null,"abstract":"A family of ultrafast photodetectors based on evanescently coupled photodiodes, is described. The waveguide-integrated detectors are monolithically integrated with bias-Ts, coplanar transmission lines and MMI-couplers, employing semi-insulating optical waveguides on a semi-insulating InP:Fe substrate. The integration scheme is explained and demonstrated by examples of miniaturized ultra-broadband-, traveling wave-, and narrowband photodetectors, operating up to frequencies exceeding 120 GHz.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"276 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123030459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
High Current and Low Turn-On Voltage InAlAs/InGaAsSb/InGaAs Heterojunction Bipolar Transistor 高电流和低导通电压InAlAs/InGaAsSb/InGaAs异质结双极晶体管
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381143
Shu-Han Chen, Sheng-Yu Wang, Kuo-Hung Teng, J. Chyi
{"title":"High Current and Low Turn-On Voltage InAlAs/InGaAsSb/InGaAs Heterojunction Bipolar Transistor","authors":"Shu-Han Chen, Sheng-Yu Wang, Kuo-Hung Teng, J. Chyi","doi":"10.1109/ICIPRM.2007.381143","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381143","url":null,"abstract":"This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>Sb<sub>y</sub> HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower V<sub>CE.offset</sub> voltage and a greater junction ideality factor than conventional In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As single HBT structures. The quaternary In<sub>x</sub>Ga<sub>1-x</sub>As<sub>1-y</sub>Sb<sub>y</sub> base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131502252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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