高电流和低导通电压InAlAs/InGaAsSb/InGaAs异质结双极晶体管

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381143

Shu-Han Chen, Sheng-Yu Wang, Kuo-Hung Teng, J. Chyi

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引用次数: 2

摘要

本文研究了采用固体源分子束外延(MBE)生长的四元InGaAsSb基异质结双极晶体管(HBT)的直流特性。新型In0.52Al0.48As/InxGa1-xAs1-ySby HBT具有较低的基极/发射极(B/E)结导通电压，较低的VCE。与传统的In0.52Al0.48As/In0.53Ga0.47As单HBT结构相比，具有更高的结理想因数。第四季InxGa1-xAs1-ySby基提供了i型B/E结和ii型基/集电极(B/C)结，这表明InGaAsSb基HBT在低功耗和高速应用方面具有很大的潜力。

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High Current and Low Turn-On Voltage InAlAs/InGaAsSb/InGaAs Heterojunction Bipolar Transistor

This study investigates the DC characteristics of a heterojunction bipolar transistor (HBT) with a quaternary InGaAsSb base, grown by solid-source molecular beam epitaxy (MBE). The novel In_0.52Al_0.48As/In_xGa_1-xAs_1-ySb_y HBT has a lower base/emitter (B/E) junction turn-on voltage, a lower V_CE.offset voltage and a greater junction ideality factor than conventional In_0.52Al_0.48As/In_0.53Ga_0.47As single HBT structures. The quaternary In_xGa_1-xAs_1-ySb_y base provides a type-I B/E junction and a type-II base/collector (B/C) junction, suggesting that the InGaAsSb base HBT has great potential for low-power and high-speed applications.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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