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MMIC Compatible Wafer-Level Packaging Technology 兼容MMIC晶圆级封装技术
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.380677
P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, D. Duan, O. Fordham, T. Chung, R. Sandhu, R. Tsai
{"title":"MMIC Compatible Wafer-Level Packaging Technology","authors":"P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, D. Duan, O. Fordham, T. Chung, R. Sandhu, R. Tsai","doi":"10.1109/ICIPRM.2007.380677","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.380677","url":null,"abstract":"Northrop Grumman Space Technology (NGST) has developed a MMIC compatible, hermetic wafer-level packaging (WLP) technology that is proven to be hermetic, mechanically and electrically robust. This WLP technology is an enabling technology for realizing lightweight, multifunctional and low cost modules for current and future space and military systems. In this paper, data obtained from various packaged MMICs using NGST's WLP technology is presented. Furthermore, RF front-end modules with integrated antenna are also demonstrated. NGST's WLP technology enables true three-dimensional circuit integration by allowing intimate multi-function integration among various MMIC technologies and offers significant size and weight advantages to future high performance RF systems.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123049207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Improved Emission Wavelength Reproducibiliy of InP-Based All Movpe Grown 1.55 μm Quantum Dot Lasers 提高了基于inp的1.55 μm量子点激光器发射波长的再现性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381252
D. Franke, P. Harde, J. Boettcher, M. Moehrle, A. Sigmund, H. Kuenzel
{"title":"Improved Emission Wavelength Reproducibiliy of InP-Based All Movpe Grown 1.55 μm Quantum Dot Lasers","authors":"D. Franke, P. Harde, J. Boettcher, M. Moehrle, A. Sigmund, H. Kuenzel","doi":"10.1109/ICIPRM.2007.381252","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381252","url":null,"abstract":"InAs quantum dots (QD) on InP emitting at 1.55 μm grown by using conventional MOVPE sources were investigated. Aiming at their implementation in 1.55 μm laser structures thermal stability of the QDs during growth of the upper cladding layer was found to be a severe problem most probably due to movement of growth constituents resulting in a marked blue-shift of the emission. This shift was systematically investigated using thermal treatment to simulate cladding growth. The strong dependence of the blue-shift on growth temperature (T<sub>g</sub>) of the QDs is believed to be due to defects being incorporated during GalnAsP matrix deposition. The cause for the defects is assumed to be incomplete decomposition of the PH<sub>3</sub> or reduced surface diffusion length at low T<sub>g</sub> which support interdiffusion. Above T<sub>g</sub> = 510°C stable emission from the QDs independent of regrowth temperature in this range was observed. Application of a QD deposition temperature of 500°C results in laser structures with a QD density of 5-10<sup>10</sup> cm<sup>-2</sup>. Excellent laser material quality characterized by J<sub>th</sub> ≪ 100 A/cm<sup>2</sup> per QD layer was achieved.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"278 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122755472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High Single Mode Power Wafer Fused InAlGaAs/InP -AlGaAs/GaAs VCSELs Emitting in the 1.3-1.6μm Wavelength Range 高单模功率晶圆融合InAlGaAs/InP -AlGaAs/GaAs vcsel，波长范围为1.3 ~ 1.6μm
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381216
A. Mereuta, V. Iakovlev, A. Caliman, P. Royo, A. Mircea, A. Rudra, G. Suruceanu, A. Syrbu, E. Kapon
{"title":"High Single Mode Power Wafer Fused InAlGaAs/InP -AlGaAs/GaAs VCSELs Emitting in the 1.3-1.6μm Wavelength Range","authors":"A. Mereuta, V. Iakovlev, A. Caliman, P. Royo, A. Mircea, A. Rudra, G. Suruceanu, A. Syrbu, E. Kapon","doi":"10.1109/ICIPRM.2007.381216","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381216","url":null,"abstract":"We demonstrate double wafer-fused 1.3 and 1.5 μm VCSELs showing record high single mode power up to 75°C, as well as polarization stability, modulation speed up to 10 Gb/s, and accurate wavelength selection capabilities.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117019497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Integration of Front Power Monitor with Distributed Reflector Laser Through Deep Etched Narrow Groove Isolation 采用深刻蚀窄槽隔离技术实现前电源监控与分布式反射激光器的集成
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381119
R. Suemitsu, S. Ullah, Seunghun Lee, M. Otake, N. Nishiyama, S. Arai
{"title":"Integration of Front Power Monitor with Distributed Reflector Laser Through Deep Etched Narrow Groove Isolation","authors":"R. Suemitsu, S. Ullah, Seunghun Lee, M. Otake, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2007.381119","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381119","url":null,"abstract":"Monolithic integration of a distributed reflector (DR) laser with a front power monitor has been fabricated, where quantum wire-like active regions have been used as a photo detector for the first time. The electrical isolation between the laser and power monitor sections has been realized by deep (3.8 mum) and narrow (500 nm) groove etching while moderately high optical transmittivity of about 95% and a very high isolation resistance of 60 MOmega have been achieved. Almost linear photocurrent output has been observed with increasing the optical output power.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129742411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaAs/GaAs Ring-Like Nanostructures Grown by Droplet Epitaxy Using Molecular Beam Epitaxy 利用分子束外延的液滴外延生长InGaAs/GaAs环状纳米结构
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381152
N. Pankaow, S. Panyakeow, S. Ratanathammaphan
{"title":"InGaAs/GaAs Ring-Like Nanostructures Grown by Droplet Epitaxy Using Molecular Beam Epitaxy","authors":"N. Pankaow, S. Panyakeow, S. Ratanathammaphan","doi":"10.1109/ICIPRM.2007.381152","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381152","url":null,"abstract":"Self-assembled InGaAs ring-shape nanostructures on GaAs were fabricated by droplet-epitaxy technique. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. Photoluminescence results confirmed the high quality of nanocrystal.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128650089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Passivation Effect of Electron-Beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency 电子束抗蚀剂对InAs量子点的表面钝化效应及其发光效率的提高
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381179
Y. Idutsu, Y. Hayashi, M. Endo, K. Uesugi, I. Suemune
{"title":"Surface Passivation Effect of Electron-Beam Resist on InAs Quantum Dots and Their Improved Luminescence Efficiency","authors":"Y. Idutsu, Y. Hayashi, M. Endo, K. Uesugi, I. Suemune","doi":"10.1109/ICIPRM.2007.381179","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381179","url":null,"abstract":"Surface passivation effect of electron-beam resist (EBR) on InAs quantum dots (QDs) was studied to fabricate nano devices based on QDs open to air. When polymethylmethacrylate (PMMA) was coated on InAs QD surfaces, the luminescence spectra and efficiencies were stably preserved for more than months. On the other hand, other EBRs such as ZEP or SAL were coated, photoluminescence (PL) efficiencies were decreased and the modification of QD structures were observed after the removal of EBRs. The enhancement or suppression of PL intensities was observed depending on the coated EBR thicknesses, which was attributed to the multiple optical reflection effect of emitted photons within the transparent EBR layers.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121376864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High Optical Quality of InAs Quantum Dots with an InAlAsSb Strain-Reducing Layer 具有InAlAsSb减应变层的InAs量子点的高光学质量
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381149
P. Chiu, Wei-Sheng Liu, Meng-Jie Shiau, J. Chyi, Wen-Yen Chen, Hsing-Szu Chang, T. Hsu
{"title":"High Optical Quality of InAs Quantum Dots with an InAlAsSb Strain-Reducing Layer","authors":"P. Chiu, Wei-Sheng Liu, Meng-Jie Shiau, J. Chyi, Wen-Yen Chen, Hsing-Szu Chang, T. Hsu","doi":"10.1109/ICIPRM.2007.381149","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381149","url":null,"abstract":"The effects of a thin InAlAsSb strain-reducing layer (SRL) on the optical properties of InAs/GaAs quantum dots (QDs) are studied. The adoption of the InAlAsSb SRL results in higher emission intensity and better size uniformity than its InAlAs counterpart. InAs QDs capped with the InAlAsSb SRL reveal a large state separation of 103 meV and thermal activation energy of 530 meV. The increase in radiative efficiency and temperature stability is attributed to high carrier confinement and reduced defects by the InAlAsSb SRL.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"182 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114851689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth Process of GaAs Cap Layers on GaSb/GaAs Quantum Dot Surfaces GaSb/GaAs量子点表面上GaAs帽层的生长过程
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381226
K. Uesugi, M. Sato, Y. Idutsu, I. Suemune
{"title":"Growth Process of GaAs Cap Layers on GaSb/GaAs Quantum Dot Surfaces","authors":"K. Uesugi, M. Sato, Y. Idutsu, I. Suemune","doi":"10.1109/ICIPRM.2007.381226","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381226","url":null,"abstract":"Self-assembled GaSb quantum dots (QDs) have been grown on GaAs(001) surface by metal-organic molecular beam epitaxy in the Stranski-Krastanow growth mode. The density of GaSb QDs in a wide range from 5times108 cm-2 to 4times1010 cm-2 can be controlled by changing the growth temperature between 400degC and 510degC. Etching of GaSb QDs was observed by the supply of trisdimethylaminoarcenic and trisdimethylaminoantimony at the temperature above 450degC. Luminescence from the GaSb/GaAs QDs showed a blue shift by the replacement of Sb with As atoms during GaAs cap growth. To realize long-wavelength emission, 2-step growth of GaAs cap layer was proposed. After GaAs QD structure was grown on the terrace surface between neighboring GaSb QDs at 400degC, the GaAs layer was grown to bury the GaSb and GaAs QDs at 450degC. The red shift of the luminescence peak up to 1.22 mum and the improvement of luminescent efficiency of GaSb/GaAs QDs were observed.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133907867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Improved Temperature Dependences of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning 利用Bragg波长失谐改善线状有源区GaInAsP/InP DFB激光器的温度依赖性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381241
Y. Nishimoto, D. Plumwongrot, S. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama, S. Arai
{"title":"Improved Temperature Dependences of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning","authors":"Y. Nishimoto, D. Plumwongrot, S. Ullah, Y. Tamura, M. Kurokawa, T. Maruyama, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2007.381241","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381241","url":null,"abstract":"By adopting Bragg wavelength detuning into DFB lasers with wirelike active regions, the changes of threshold current densities and differential quantum efficiencies as low as plusmn19% and 24%, respectively, were obtained between 10degC and 85degC.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131536254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nine-fold photoluminescence enhancement using photonic crystals with graphite lattice 石墨晶格光子晶体九倍光致发光增强
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381157
M. Mulot, O. Sihvonen, F. Raineri, I. Sagnes, G. Vecchi, R. Raj, H. Lipsanen
{"title":"Nine-fold photoluminescence enhancement using photonic crystals with graphite lattice","authors":"M. Mulot, O. Sihvonen, F. Raineri, I. Sagnes, G. Vecchi, R. Raj, H. Lipsanen","doi":"10.1109/ICIPRM.2007.381157","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381157","url":null,"abstract":"We manufactured an optically active InP-on-insulator structure using spin-on-glass bonding. A ninefold improvement of photoluminescence was obtained by patterning a photonic crystal with graphite lattice into the InP layer.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130748566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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