利用分子束外延的液滴外延生长InGaAs/GaAs环状纳米结构

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381152

N. Pankaow, S. Panyakeow, S. Ratanathammaphan

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引用次数: 0

摘要

采用液滴外延技术在砷化镓表面制备了自组装InGaAs环状纳米结构。研究了衬底温度和铟镓用量对纳米结构性能的影响。光致发光结果证实了纳米晶体的高质量。

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InGaAs/GaAs Ring-Like Nanostructures Grown by Droplet Epitaxy Using Molecular Beam Epitaxy

Self-assembled InGaAs ring-shape nanostructures on GaAs were fabricated by droplet-epitaxy technique. Dependence on the substrate temperature and the amount of indium and gallium of the nanostructural properties was investigated. Photoluminescence results confirmed the high quality of nanocrystal.

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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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