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2007 IEEE 19th International Conference on Indium Phosphide & Related Materials最新文献

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Fast Switching Tunable Laser Sources for Wavelength Division Multiplexing in Passive Optical Access Networks 无源光接入网中用于波分复用的快速交换可调谐激光源
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381262
B. Roycroft, S. K. Mondal, P. Lambkin, P. Engelstaedter, B. Corbett, F. Peters, F. Smyth, L. Barry, R. Phelan, J. Donegan, A. Ellis
{"title":"Fast Switching Tunable Laser Sources for Wavelength Division Multiplexing in Passive Optical Access Networks","authors":"B. Roycroft, S. K. Mondal, P. Lambkin, P. Engelstaedter, B. Corbett, F. Peters, F. Smyth, L. Barry, R. Phelan, J. Donegan, A. Ellis","doi":"10.1109/ICIPRM.2007.381262","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381262","url":null,"abstract":"Tunable laser structures with nanosecond switching time between wavelength channels and low-power injection locking are demonstrated on a low-cost platform. These lasers are suitable as source or slave lasers in WDM passive optical access networks.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130728590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High Performance and High Reliability of 0.1 /spl mu/m InP HEMT MMIC Technology on 100 mm InP Substrates 在100mm InP基板上实现0.1 /spl μ m InP HEMT MMIC技术的高性能和高可靠性
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381123
R. Lai, Y. Chou, L.J. Lee, P. Liu, D. Leung, Q. Kan, X. Mei, C.H. Lin, D. Farkas, M. Barsky, D. Eng, A. Cavus, M. Lange, P. Chin, M. Wojtowicz, T. Block, A. Oki
{"title":"High Performance and High Reliability of 0.1 /spl mu/m InP HEMT MMIC Technology on 100 mm InP Substrates","authors":"R. Lai, Y. Chou, L.J. Lee, P. Liu, D. Leung, Q. Kan, X. Mei, C.H. Lin, D. Farkas, M. Barsky, D. Eng, A. Cavus, M. Lange, P. Chin, M. Wojtowicz, T. Block, A. Oki","doi":"10.1109/ICIPRM.2007.381123","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381123","url":null,"abstract":"Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114625085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High-Gain Top-Illuminated Optoelectronic Integrated Receiver 高增益顶照光电集成接收机
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381126
S. Kraus, D. Cohen-Elias, S. Cohen, A. Gavrilov, O. Kami, Y. Swirski, G. Eisenstein, D. Ritter
{"title":"High-Gain Top-Illuminated Optoelectronic Integrated Receiver","authors":"S. Kraus, D. Cohen-Elias, S. Cohen, A. Gavrilov, O. Kami, Y. Swirski, G. Eisenstein, D. Ritter","doi":"10.1109/ICIPRM.2007.381126","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381126","url":null,"abstract":"We present a monolithic photo-receiver based upon the InP/GalnAs HBT technology for optical communication at 1.55 mum. The photoreceiver consists of a top-illuminated photodiode and a transimpedance traveling wave amplifier. The same layers are used for the diodes and the base collector junction of the transistors. An advanced amplifier design, that achieves high bandwidth-to-fT ratio, expands the frequency response of the receiver over 40 GHz. The photoreceiver exhibits an optoelectronic gain of 100 V/W, amplifier bandwidth of 52 GHz, and optoelectronic bandwidth in excess of 46 GHz. The same receiver, when biased differently to optimize group delay, exhibits an optoelectronic gain of 64 V/W, amplifier bandwidth of 44 GHz, and optoelectronic bandwidth in excess of 43 GHz. These are the highest reported gains for receivers operating beyond 40 GHz.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129217570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Fabrication of Double Channel Recessed Laterally Coupled Surface Metal Grating DFB LD Using Holographic Lithography 利用全息光刻技术制备双通道凹进式横向耦合表面金属光栅DFB LD
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381170
S. Jang, Y. Lee
{"title":"Fabrication of Double Channel Recessed Laterally Coupled Surface Metal Grating DFB LD Using Holographic Lithography","authors":"S. Jang, Y. Lee","doi":"10.1109/ICIPRM.2007.381170","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381170","url":null,"abstract":"Laterally coupled surface metal grating DFB LD was fabricated using holographic lithography. The device shows single longitudinal mode operation, with a threshold current of 25 mA and 28 dB side mode suppression ratio.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123020430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications 用于毫米波和亚毫米波应用的35nm InP HEMT
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381122
X. Mei, W. Yoshida, W. Deal, P. Liu, J. Lee, J. Uyeda, L. Dang, J. Wang, W. Liu, M. Barsky, Y. Kim, M. Lange, T. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai
{"title":"35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications","authors":"X. Mei, W. Yoshida, W. Deal, P. Liu, J. Lee, J. Uyeda, L. Dang, J. Wang, W. Liu, M. Barsky, Y. Kim, M. Lange, T. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai","doi":"10.1109/ICIPRM.2007.381122","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381122","url":null,"abstract":"A new InP HEMT process has been developed with 35nm gate length and improved Ohmic contact. A gate-source capacitance of 0.4pF/mm is achieved with the reduced gate length, a 30% improvement over our baseline 70nm device. The contact resistance is successfully reduced to 0.07 with the newly designed contact layer combined with an alloyed Au/Ge/Ni/Au Ohmic metal. Good device characteristics has been demonstrated with a transconductance as high as 2 S/mm and a cutoff frequency fr of 420GHz. A single-stage common-source amplifier was fabricated with this new process. A peak gain of 5dB is measured at 265GHz. A MAG/MSG of 3dB at 300GHz was achieved, making the device suitable for applications at frequencies well into the millimeter-wave and even sub-millimeter-wave band.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133756251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Single n-InAs Nanowire MIS-Field-Effect Transistor: Experimental and Simulation Results 单n-InAs纳米线场效应晶体管:实验和模拟结果
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381206
Q. Do, K. Blekker, I. Regolin, W. Prost, F. Tegude
{"title":"Single n-InAs Nanowire MIS-Field-Effect Transistor: Experimental and Simulation Results","authors":"Q. Do, K. Blekker, I. Regolin, W. Prost, F. Tegude","doi":"10.1109/ICIPRM.2007.381206","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381206","url":null,"abstract":"We fabricated and characterised n-InAs nanowire field effect transistors. Nanowires were grown by metal-organic vapour-phase epitaxy (MOVPE) using the vapour-liquid-solid (VLS) growth mode. Metal-insulator field-effect transistors are fabricated using single n-InAs nanowire with a diameter of d = 50 nm as a channel and a silicon nitride gate dielectric. The gate length and gate dielectric variation are experimentally studied by means of DC output-and transfer-characteristics and is modeled using the long-channel MOSFET equations. The device properties are studied for an insulating layer thickness from 20 nm to 90 nm while the gate length is varied from 1 mum to 5 mum. The InAs nanowire field-effect transistors exhibit an excellent saturation behavior and breakdown voltage values of VBR > 3 V. The channel current divided by the diameter d of a nanowire reaches 3 A/mm. A maximum normalized transconductance gm/d > 2 S/mm at room temperature is routinely measured for devices with a gate length les 2 mum and a gate dielectric layer thickness les 30 nm. Based on Iniguez's continuous charge control model for surrounding-gate MOSFET, the device is modelled and compared to experimental data. The good agreement verifies the validity of the model and provides detailed information on transport parameters available in InAs NW.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130499549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Wide Emission Spectra from Multi-stack InGaAs Quantum Dots 多层InGaAs量子点的宽发射光谱
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381155
T. Tzeng, D. Feng, T. Lay, T. Chang
{"title":"Wide Emission Spectra from Multi-stack InGaAs Quantum Dots","authors":"T. Tzeng, D. Feng, T. Lay, T. Chang","doi":"10.1109/ICIPRM.2007.381155","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381155","url":null,"abstract":"Multi-layer InGaAs quantum dots have been grown and investigated to have 165 nm broad-band emission at lambda=1300 nm by tailoring the In and Ga compositions for the dots and caps in the stacked layers.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131641588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design on Polarization Independent Side-Long-Period-Grating Loaded Semiconductor Waveguide-type Gain Equalizing Devices 偏振无关边长周期光栅负载半导体波导型增益均衡器件的设计
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381173
K. Terada, E. Fujii, Z. Wu, K. Utaka
{"title":"Design on Polarization Independent Side-Long-Period-Grating Loaded Semiconductor Waveguide-type Gain Equalizing Devices","authors":"K. Terada, E. Fujii, Z. Wu, K. Utaka","doi":"10.1109/ICIPRM.2007.381173","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381173","url":null,"abstract":"We have developed a polarization-independent semiconductor gain equalizer by a side-LPG loaded with a semiconductor waveguide. The analysis shows the possibility of tolerable structure for polarization-independent operation, and preliminary effective notch filtering characteristics are exhibited.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131453450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
80 °C CW Operation of GaInAsP/InP Membrane BH-DFB Laser with Air-Bridge Structure 气桥结构GaInAsP/InP膜BH-DFB激光器80°C连续工作
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381230
H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama, S. Arai
{"title":"80 °C CW Operation of GaInAsP/InP Membrane BH-DFB Laser with Air-Bridge Structure","authors":"H. Naitoh, S. Sakamoto, M. Ohtake, T. Okumura, T. Maruyama, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2007.381230","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381230","url":null,"abstract":"Membrane BH-DFB lasers emitting in 1500-1600 nm wavelength are realized with an air-bridge structure, and continuous wave operations up to moderately high temperature (80degC) were achieved under an optical pumping. The thermal resistance was estimated to be 11 K/mW, which is half that of membrane BH-DFB lasers fabricated by bonding on BCB coated InP substrate.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":" 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132074301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Selective Formation of High Density InAs Quantum Dot Arrays Using Templates Fabricated by the Nano-Jet Probe 用纳米喷射探针制备模板选择性形成高密度InAs量子点阵列
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI: 10.1109/ICIPRM.2007.381227
S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa
{"title":"Selective Formation of High Density InAs Quantum Dot Arrays Using Templates Fabricated by the Nano-Jet Probe","authors":"S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa","doi":"10.1109/ICIPRM.2007.381227","DOIUrl":"https://doi.org/10.1109/ICIPRM.2007.381227","url":null,"abstract":"We have demonstrated the selective area growth of high density InAs quantum dots (QDs) in the square regions by using site-controlled InAs dots that were formed in the desired regions as templates. These fabricated InAs dots for the templates were enabled by the use of a specially designed atomic-force-microscope (AFM) cantilever, referred to as the Nano-Jet Probe (NJP). Using the NJP, two-dimensional (2D) arrays of ordered In nano-dots were fabricated in the desired square regions on a GaAs substrate. These In nano-dots were directly converted to InAs QD arrays by subsequent annealing with irradiation of arsenic flux. By using the converted QD arrays as strain templates, self-organized InAs QDs with high density were formed in the selected square regions.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130871411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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