Wide Emission Spectra from Multi-stack InGaAs Quantum Dots

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381155

T. Tzeng, D. Feng, T. Lay, T. Chang

引用次数: 0

Abstract

Multi-layer InGaAs quantum dots have been grown and investigated to have 165 nm broad-band emission at lambda=1300 nm by tailoring the In and Ga compositions for the dots and caps in the stacked layers.

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多层InGaAs量子点的宽发射光谱

通过调整堆叠层中点和帽的In和Ga成分，生长并研究了多层InGaAs量子点在λ =1300 nm处具有165 nm的宽带发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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