高增益顶照光电集成接收机

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381126

S. Kraus, D. Cohen-Elias, S. Cohen, A. Gavrilov, O. Kami, Y. Swirski, G. Eisenstein, D. Ritter

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引用次数: 4

摘要

我们提出了一种基于InP/GalnAs HBT技术的单片光接收机，用于1.55毫微米光通信。该光接收器由顶照光电二极管和跨阻行波放大器组成。同样的层用于二极管和晶体管的基极集电极结。先进的放大器设计，实现高带宽与ft比，扩展接收器的频率响应超过40 GHz。光电接收器的光电增益为100 V/W，放大器带宽为52 GHz，光电带宽超过46 GHz。相同的接收器，当偏置不同以优化群延迟时，其光电增益为64 V/W，放大器带宽为44 GHz，光电带宽超过43 GHz。这是报道的40 GHz以上接收机的最高增益。

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High-Gain Top-Illuminated Optoelectronic Integrated Receiver

We present a monolithic photo-receiver based upon the InP/GalnAs HBT technology for optical communication at 1.55 mum. The photoreceiver consists of a top-illuminated photodiode and a transimpedance traveling wave amplifier. The same layers are used for the diodes and the base collector junction of the transistors. An advanced amplifier design, that achieves high bandwidth-to-fT ratio, expands the frequency response of the receiver over 40 GHz. The photoreceiver exhibits an optoelectronic gain of 100 V/W, amplifier bandwidth of 52 GHz, and optoelectronic bandwidth in excess of 46 GHz. The same receiver, when biased differently to optimize group delay, exhibits an optoelectronic gain of 64 V/W, amplifier bandwidth of 44 GHz, and optoelectronic bandwidth in excess of 43 GHz. These are the highest reported gains for receivers operating beyond 40 GHz.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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