利用全息光刻技术制备双通道凹进式横向耦合表面金属光栅DFB LD

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381170

S. Jang, Y. Lee

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引用次数: 1

摘要

采用全息光刻技术制备了横向耦合表面金属光栅DFB LD。该器件为单纵模工作，阈值电流为25 mA，侧模抑制比为28 dB。

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Fabrication of Double Channel Recessed Laterally Coupled Surface Metal Grating DFB LD Using Holographic Lithography

Laterally coupled surface metal grating DFB LD was fabricated using holographic lithography. The device shows single longitudinal mode operation, with a threshold current of 25 mA and 28 dB side mode suppression ratio.

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来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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