多层InGaAs量子点的宽发射光谱

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials Pub Date : 2007-05-14 DOI:10.1109/ICIPRM.2007.381155

T. Tzeng, D. Feng, T. Lay, T. Chang

{"title":"多层InGaAs量子点的宽发射光谱","authors":"T. Tzeng, D. Feng, T. Lay, T. Chang","doi":"10.1109/ICIPRM.2007.381155","DOIUrl":null,"url":null,"abstract":"Multi-layer InGaAs quantum dots have been grown and investigated to have 165 nm broad-band emission at lambda=1300 nm by tailoring the In and Ga compositions for the dots and caps in the stacked layers.","PeriodicalId":352388,"journal":{"name":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Wide Emission Spectra from Multi-stack InGaAs Quantum Dots\",\"authors\":\"T. Tzeng, D. Feng, T. Lay, T. Chang\",\"doi\":\"10.1109/ICIPRM.2007.381155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multi-layer InGaAs quantum dots have been grown and investigated to have 165 nm broad-band emission at lambda=1300 nm by tailoring the In and Ga compositions for the dots and caps in the stacked layers.\",\"PeriodicalId\":352388,\"journal\":{\"name\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2007.381155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 19th International Conference on Indium Phosphide & Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2007.381155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过调整堆叠层中点和帽的In和Ga成分，生长并研究了多层InGaAs量子点在λ =1300 nm处具有165 nm的宽带发射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Wide Emission Spectra from Multi-stack InGaAs Quantum Dots

Multi-layer InGaAs quantum dots have been grown and investigated to have 165 nm broad-band emission at lambda=1300 nm by tailoring the In and Ga compositions for the dots and caps in the stacked layers.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

自引率

0.00%

发文量