S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa
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引用次数: 0
Abstract
We have demonstrated the selective area growth of high density InAs quantum dots (QDs) in the square regions by using site-controlled InAs dots that were formed in the desired regions as templates. These fabricated InAs dots for the templates were enabled by the use of a specially designed atomic-force-microscope (AFM) cantilever, referred to as the Nano-Jet Probe (NJP). Using the NJP, two-dimensional (2D) arrays of ordered In nano-dots were fabricated in the desired square regions on a GaAs substrate. These In nano-dots were directly converted to InAs QD arrays by subsequent annealing with irradiation of arsenic flux. By using the converted QD arrays as strain templates, self-organized InAs QDs with high density were formed in the selected square regions.