Selective Formation of High Density InAs Quantum Dot Arrays Using Templates Fabricated by the Nano-Jet Probe

S. Ohkouchi, Y. Sugimoto, N. Ozaki, H. Ishikawa, K. Asakawa
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Abstract

We have demonstrated the selective area growth of high density InAs quantum dots (QDs) in the square regions by using site-controlled InAs dots that were formed in the desired regions as templates. These fabricated InAs dots for the templates were enabled by the use of a specially designed atomic-force-microscope (AFM) cantilever, referred to as the Nano-Jet Probe (NJP). Using the NJP, two-dimensional (2D) arrays of ordered In nano-dots were fabricated in the desired square regions on a GaAs substrate. These In nano-dots were directly converted to InAs QD arrays by subsequent annealing with irradiation of arsenic flux. By using the converted QD arrays as strain templates, self-organized InAs QDs with high density were formed in the selected square regions.
用纳米喷射探针制备模板选择性形成高密度InAs量子点阵列
我们利用在所需区域形成的位置控制的InAs点作为模板,证明了高密度InAs量子点(QDs)在正方形区域中的选择性面积生长。这些为模板制造的InAs点是通过使用一种特殊设计的原子力显微镜(AFM)悬臂来实现的,这种悬臂被称为纳米喷射探针(NJP)。使用NJP,在GaAs衬底上所需的方形区域中制备了有序的二维(2D) In纳米点阵列。这些In纳米点经砷通量辐照退火后直接转化为InAs量子点阵列。利用转换后的量子点阵列作为应变模板,在选定的方形区域内形成高密度的自组织InAs量子点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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